{"title":"基于散射矩阵的紧凑MOSFET模型","authors":"H. Wang, G. Gildenblat","doi":"10.1109/IEDM.2002.1175794","DOIUrl":null,"url":null,"abstract":"This work introduces a compact MOSFET model including quasi-ballistic effects. The proposed model is based on a combination of the one-flux scattering matrix approach with an advanced surface-potential-based model. The ballistic limit and traditional charge-sheet models are recovered as special cases. Circuit simulations demonstrate the practicality of the new approach to compact modeling.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"8 1","pages":"125-128"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Scattering matrix based compact MOSFET model\",\"authors\":\"H. Wang, G. Gildenblat\",\"doi\":\"10.1109/IEDM.2002.1175794\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work introduces a compact MOSFET model including quasi-ballistic effects. The proposed model is based on a combination of the one-flux scattering matrix approach with an advanced surface-potential-based model. The ballistic limit and traditional charge-sheet models are recovered as special cases. Circuit simulations demonstrate the practicality of the new approach to compact modeling.\",\"PeriodicalId\":74909,\"journal\":{\"name\":\"Technical digest. International Electron Devices Meeting\",\"volume\":\"8 1\",\"pages\":\"125-128\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical digest. International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2002.1175794\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175794","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This work introduces a compact MOSFET model including quasi-ballistic effects. The proposed model is based on a combination of the one-flux scattering matrix approach with an advanced surface-potential-based model. The ballistic limit and traditional charge-sheet models are recovered as special cases. Circuit simulations demonstrate the practicality of the new approach to compact modeling.
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