{"title":"基于价变机制的电阻开关器件紧凑建模","authors":"Camilla La Torre, A. Zurhelle, S. Menzel","doi":"10.1109/SISPAD.2019.8870538","DOIUrl":null,"url":null,"abstract":"In this paper, a compact model for filamentary, resistive switching devices based on the valence change mechanism is proposed. It is based on the motion of ionic defects in a filamentary region. In contrast to previous model, it uses two state variables representing the ionic defect concentration close to the two opposing electrodes. This enables the modelling of ionic diffusion and, hence, drift-diffusion equilibria. In addition, the model can be used to simulate complementary switching in addition to the standard bipolar switching behavior.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"71 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Compact Modelling of Resistive Switching Devices based on the Valence Change Mechanism\",\"authors\":\"Camilla La Torre, A. Zurhelle, S. Menzel\",\"doi\":\"10.1109/SISPAD.2019.8870538\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a compact model for filamentary, resistive switching devices based on the valence change mechanism is proposed. It is based on the motion of ionic defects in a filamentary region. In contrast to previous model, it uses two state variables representing the ionic defect concentration close to the two opposing electrodes. This enables the modelling of ionic diffusion and, hence, drift-diffusion equilibria. In addition, the model can be used to simulate complementary switching in addition to the standard bipolar switching behavior.\",\"PeriodicalId\":6755,\"journal\":{\"name\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"71 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2019.8870538\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870538","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Compact Modelling of Resistive Switching Devices based on the Valence Change Mechanism
In this paper, a compact model for filamentary, resistive switching devices based on the valence change mechanism is proposed. It is based on the motion of ionic defects in a filamentary region. In contrast to previous model, it uses two state variables representing the ionic defect concentration close to the two opposing electrodes. This enables the modelling of ionic diffusion and, hence, drift-diffusion equilibria. In addition, the model can be used to simulate complementary switching in addition to the standard bipolar switching behavior.
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