CVD生长用于大规模集成电路互连的嵌入多层石墨烯

D. Kondo, H. Nakano, Bo Zhou, I. Kubota, Kenjiro Hayashi, K. Yagi, M. Takahashi, Motonobu Sato, Shintaro Sato, N. Yokoyama
{"title":"CVD生长用于大规模集成电路互连的嵌入多层石墨烯","authors":"D. Kondo, H. Nakano, Bo Zhou, I. Kubota, Kenjiro Hayashi, K. Yagi, M. Takahashi, Motonobu Sato, Shintaro Sato, N. Yokoyama","doi":"10.1109/IITC.2013.6615600","DOIUrl":null,"url":null,"abstract":"We have fabricated multi-layer graphene (MLG) wiring and demonstrated a resistivity of the same order as Cu and reliability better than Cu. The MLG was synthesized epitaxially by chemical vapor deposition (CVD) on an epitaxial Co film, resulting in quality and electrical properties as good as those of a graphite crystal. The MLG was further intercalated with FeCl3 to achieve a resistivity as low as 9.1 μΩ cm. Our results show that intercalated MLG is really promising for future LSI interconnects.","PeriodicalId":6377,"journal":{"name":"2013 IEEE International Interconnect Technology Conference - IITC","volume":"08 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Intercalated multi-layer graphene grown by CVD for LSI interconnects\",\"authors\":\"D. Kondo, H. Nakano, Bo Zhou, I. Kubota, Kenjiro Hayashi, K. Yagi, M. Takahashi, Motonobu Sato, Shintaro Sato, N. Yokoyama\",\"doi\":\"10.1109/IITC.2013.6615600\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have fabricated multi-layer graphene (MLG) wiring and demonstrated a resistivity of the same order as Cu and reliability better than Cu. The MLG was synthesized epitaxially by chemical vapor deposition (CVD) on an epitaxial Co film, resulting in quality and electrical properties as good as those of a graphite crystal. The MLG was further intercalated with FeCl3 to achieve a resistivity as low as 9.1 μΩ cm. Our results show that intercalated MLG is really promising for future LSI interconnects.\",\"PeriodicalId\":6377,\"journal\":{\"name\":\"2013 IEEE International Interconnect Technology Conference - IITC\",\"volume\":\"08 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Interconnect Technology Conference - IITC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2013.6615600\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Interconnect Technology Conference - IITC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2013.6615600","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

我们制作了多层石墨烯(MLG)布线,并证明其电阻率与Cu相同,可靠性优于Cu。采用化学气相沉积(CVD)技术在外延Co薄膜上合成了MLG晶体,其质量和电学性能与石墨晶体相当。MLG进一步嵌入FeCl3,获得了低至9.1 μΩ cm的电阻率。我们的结果表明,插入式MLG在未来的大规模集成电路互连中是非常有前途的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Intercalated multi-layer graphene grown by CVD for LSI interconnects
We have fabricated multi-layer graphene (MLG) wiring and demonstrated a resistivity of the same order as Cu and reliability better than Cu. The MLG was synthesized epitaxially by chemical vapor deposition (CVD) on an epitaxial Co film, resulting in quality and electrical properties as good as those of a graphite crystal. The MLG was further intercalated with FeCl3 to achieve a resistivity as low as 9.1 μΩ cm. Our results show that intercalated MLG is really promising for future LSI interconnects.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信