三维CMOS图像传感器光学建模研究进展:结合逼真形态和时域有限差分

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870543

B. Vianne, A. Crocherie, S. Guissi, Danielle Sieger, S. Calderón, D. Rideau, H. Wehbe-Alause

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引用次数: 0

摘要

本文描述了一种创新的方法来研究器件形态与CMOS图像传感器光学性能之间的关系。通过将基于fdtd的3D Maxwell求解器与硅精确过程建模软件相结合，我们已经能够分析图像传感器量子效率的灵敏度与纳米级器件拓扑结构的统计变化。此外，我们研究了金字塔型硅结构以提高量子效率，如文献[1]所提出的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Advances in 3D CMOS image sensors optical modeling: combining realistic morphologies with FDTD

This paper describes an innovative methodology to investigate the relationship between device morphology and the optical performance of CMOS image sensors. By coupling a FDTD-based 3D Maxwell solver with silicon-accurate process modeling software, we have been able to analyze the sensitivity of image sensor quantum efficiency with respect to statistical variations in nm-scale device topology. Additionally, we studied pyramidal silicon structuration for quantum efficiency enhancement as proposed in [1].

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2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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