Accurate and Efficient Dynamic Simulations of Ferroelectric Based Electron Devices

In recent years electron devices based on ferroelectric materials have attracted a lot of interest well beyond FeRAM memories. Negative capacitance transistors (NC-FETs) have been investigated as steep slope transistors [1], [2], and Ferroelectric FETs (Fe-FETs) are under intense scrutiny also as synaptic devices for neuromorphc computing, where the minor loops in ferroelectrics can allow to achieve multiple values of conductance in read mode [3], [4], [5]. Furthermore, the persistence of ferroelectricity in ultra-thin ferroelectric layers paved the way to ferroelectric tunnelling junctions [6], where a polarization dependent tunneling current can be exploited to realize high impedance memristors, amenable for ultra power-efficient and thus massive parallel computation.