{"title":"考虑俄歇复合和声子散射过程的低压热电子分析新模型","authors":"R. Shirota, T. Yamaguchi","doi":"10.1109/IEDM.1991.235485","DOIUrl":null,"url":null,"abstract":"The authors describe a novel accurate model and a numerical analysis of hot electron injection into the gate oxide of submicron MOSFETs in the low applied voltage region (V/sub GS/<5 V, V/sub DS/<3 V). The model quantitatively takes into account both the Auger recombination process and the phonon assist process. Calculated results agree with experimental results in the measured range of 2.3 V<V/sub DS/<2.7 V and 2.5 V<V/sub GS/<4.1 V. This agreement strongly indicates that the new model can give an accurate understanding of the injection mechanism, and successfully explains the low voltage hot electron phenomena.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"108 1","pages":"123-126"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A new analytical model for low voltage hot electron taking Auger recombination as well as phonon scattering process into account\",\"authors\":\"R. Shirota, T. Yamaguchi\",\"doi\":\"10.1109/IEDM.1991.235485\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors describe a novel accurate model and a numerical analysis of hot electron injection into the gate oxide of submicron MOSFETs in the low applied voltage region (V/sub GS/<5 V, V/sub DS/<3 V). The model quantitatively takes into account both the Auger recombination process and the phonon assist process. Calculated results agree with experimental results in the measured range of 2.3 V<V/sub DS/<2.7 V and 2.5 V<V/sub GS/<4.1 V. This agreement strongly indicates that the new model can give an accurate understanding of the injection mechanism, and successfully explains the low voltage hot electron phenomena.<<ETX>>\",\"PeriodicalId\":13885,\"journal\":{\"name\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"volume\":\"108 1\",\"pages\":\"123-126\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1991.235485\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 1991 [Technical Digest]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1991.235485","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new analytical model for low voltage hot electron taking Auger recombination as well as phonon scattering process into account
The authors describe a novel accurate model and a numerical analysis of hot electron injection into the gate oxide of submicron MOSFETs in the low applied voltage region (V/sub GS/<5 V, V/sub DS/<3 V). The model quantitatively takes into account both the Auger recombination process and the phonon assist process. Calculated results agree with experimental results in the measured range of 2.3 V>
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