{"title":"高k栅电介质堆中的电荷捕获","authors":"S. Zafar, A. Callegari, E. Gusev, M. Fischetti","doi":"10.1109/IEDM.2002.1175893","DOIUrl":null,"url":null,"abstract":"Charge trapping in Al/sub 2/O/sub 3/ and HfO/sub 2/ nFETs is studied. The dependence of threshold voltage, subthreshold slope and gate leakage currents are investigated as a function of stressing time, voltage and temperature. Based on the experimental data, a model is developed for predicting threshold voltage shifts as a function stressing time. The model is compatible with both Al/sub 2/O/sub 3/ and HfO/sub 2/ data. Using the model, threshold voltage shifts after 10 years of stressing is predicted and trapping capture cross sections are estimated. A comparison between Al/sub 2/O/sub 3/ and HfO/sub 2/ is also made.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"78 1","pages":"517-520"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"91","resultStr":"{\"title\":\"Charge trapping in high k gate dielectric stacks\",\"authors\":\"S. Zafar, A. Callegari, E. Gusev, M. Fischetti\",\"doi\":\"10.1109/IEDM.2002.1175893\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Charge trapping in Al/sub 2/O/sub 3/ and HfO/sub 2/ nFETs is studied. The dependence of threshold voltage, subthreshold slope and gate leakage currents are investigated as a function of stressing time, voltage and temperature. Based on the experimental data, a model is developed for predicting threshold voltage shifts as a function stressing time. The model is compatible with both Al/sub 2/O/sub 3/ and HfO/sub 2/ data. Using the model, threshold voltage shifts after 10 years of stressing is predicted and trapping capture cross sections are estimated. A comparison between Al/sub 2/O/sub 3/ and HfO/sub 2/ is also made.\",\"PeriodicalId\":74909,\"journal\":{\"name\":\"Technical digest. International Electron Devices Meeting\",\"volume\":\"78 1\",\"pages\":\"517-520\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"91\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical digest. International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2002.1175893\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175893","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Charge trapping in Al/sub 2/O/sub 3/ and HfO/sub 2/ nFETs is studied. The dependence of threshold voltage, subthreshold slope and gate leakage currents are investigated as a function of stressing time, voltage and temperature. Based on the experimental data, a model is developed for predicting threshold voltage shifts as a function stressing time. The model is compatible with both Al/sub 2/O/sub 3/ and HfO/sub 2/ data. Using the model, threshold voltage shifts after 10 years of stressing is predicted and trapping capture cross sections are estimated. A comparison between Al/sub 2/O/sub 3/ and HfO/sub 2/ is also made.
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