掺杂钴的VO2的电子结构和光学性质的第一性原理研究

Jinyu Wan, Xuejiao Li
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引用次数: 0

摘要

基于密度泛函理论(DFT)的第一性原理计算被用于研究纯VO2和Co掺杂VO2 (M1和R相)的相变特性、电子结构和光学性质。研究表明,掺杂Co后,VO2的金属-绝缘体相变温度显著降低,这与带隙值的减小有关。此外,M1相Co掺杂VO2的电子跃迁所需能量的降低与介电峰虚部向低能区移动相对应。对于M1相和R相的VO2, Co掺杂的VO2的可见光透过率都比纯VO2高,这有利于VO2薄膜作为可见窗口的应用。此外,Co掺杂R相VO2在红外光范围内的吸收率和反射率均大于M1相VO2,表明Co掺杂VO2在较高温度下可以阻挡更多的红外光,从而达到降低温度的目的。总的来说,这些结果为Co掺杂VO2作为调节室温的光能材料的应用提供了新的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
First‐Principles Studies of Electronic Structures and Optical Properties of Cobalt‐Doped VO2
First‐principles calculations based on density functional theory (DFT) are used to investigate the phase transition characteristics, electronic structures, and optical properties of pure and Co‐doped VO2 (M1 and R phase). Studies show that the metal‐to‐insulator phase transition temperature of VO2 is significantly reduced after Co doping, which is correlated to the decrease of bandgap value. Besides, the decrease of the energy required for electron transition of M1‐phase Co‐doped VO2 corresponds to the imaginary part of the dielectric peak moving to the low‐energy region. For both the M1‐ and R‐phase VO2, the visible light transmissivity of the Co‐doped VO2 is increased than that of pure VO2, which is beneficial to the application of VO2 film as visible windows. In addition, the absorptivity and reflectivity of Co‐doped R‐phase VO2 in the infrared light range are larger than those of M1‐phase VO2, indicating that the Co‐doped VO2 can block more infrared light at higher temperature to fulfill the purpose of lowering temperature. Overall, these results give new insights for the application of Co‐doped VO2 as a photoenergy material to regulate the room temperature.
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