Jau-Yuann Yang, Kamel Benaissa, D. Crenshaw, B. Williams, S. Sridhar, J. Ai, G. Boselli, Song Zhao, Shaoping Tang, N. Mahalingam, S. Ashburn, P. Madhani, T. Blythe, Hisashi Shichijo
{"title":"用于片上系统(SOC)应用的高电阻率基板上的0.1 /spl mu/m RFCMOS","authors":"Jau-Yuann Yang, Kamel Benaissa, D. Crenshaw, B. Williams, S. Sridhar, J. Ai, G. Boselli, Song Zhao, Shaoping Tang, N. Mahalingam, S. Ashburn, P. Madhani, T. Blythe, Hisashi Shichijo","doi":"10.1109/IEDM.2002.1175927","DOIUrl":null,"url":null,"abstract":"This paper describes the impact of substrate resistivity on the key components of the radio frequency (RF) CMOS for the system on chip (SOC) applications. The comparison includes the transistor, inductor, capacitor, noise isolation, latch-up as well as the well-to-well isolation in a 0.1 /spl mu/m (physical gate length) CMOS technology.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"2 1","pages":"667-670"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"0.1 /spl mu/m RFCMOS on high resistivity substrates for system on chip (SOC) applications\",\"authors\":\"Jau-Yuann Yang, Kamel Benaissa, D. Crenshaw, B. Williams, S. Sridhar, J. Ai, G. Boselli, Song Zhao, Shaoping Tang, N. Mahalingam, S. Ashburn, P. Madhani, T. Blythe, Hisashi Shichijo\",\"doi\":\"10.1109/IEDM.2002.1175927\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the impact of substrate resistivity on the key components of the radio frequency (RF) CMOS for the system on chip (SOC) applications. The comparison includes the transistor, inductor, capacitor, noise isolation, latch-up as well as the well-to-well isolation in a 0.1 /spl mu/m (physical gate length) CMOS technology.\",\"PeriodicalId\":74909,\"journal\":{\"name\":\"Technical digest. International Electron Devices Meeting\",\"volume\":\"2 1\",\"pages\":\"667-670\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical digest. International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2002.1175927\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175927","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
0.1 /spl mu/m RFCMOS on high resistivity substrates for system on chip (SOC) applications
This paper describes the impact of substrate resistivity on the key components of the radio frequency (RF) CMOS for the system on chip (SOC) applications. The comparison includes the transistor, inductor, capacitor, noise isolation, latch-up as well as the well-to-well isolation in a 0.1 /spl mu/m (physical gate length) CMOS technology.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
