自发取向极化引起的低偏置猝灭及其对OLED效率的影响

R. Holmes
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引用次数: 0

摘要

很多研究都是针对理解有机发光器件(OLED)的效率和双分子猝灭在效率滚降中的作用。在低偏压下,淬火较少被广泛讨论,因为种群减少。在这里,我们描述了基于锁相的光致发光测量在工作的磷光oled,以证明这一假设是不普遍有效的,并且显着的激子极化子猝灭是存在的,甚至在打开之前。激子-极化子猝灭是由于电子输运层中自发取向极化引起的空穴积累引起的。这种低偏置淬火被发现强烈地决定了最大可实现的效率,这表明需要改进材料选择和设备设计规则。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low-bias quenching due to spontaneous orientation polarization and its impact on OLED efficiency
Much effort has been directed at understanding organic light-emitting device (OLED) efficiency and the role of bimolecular quenching in efficiency roll-off. Quenching is less widely discussed at low-bias, where populations are reduced. Here, we describe lock-in-based photoluminescence measurements on working phosphorescent OLEDs to demonstrate that this assumption is not generally valid, and that significant exciton-polaron quenching is present even prior to turn-on. Exciton-polaron quenching arises with holes accumulated due to spontaneous orientation polarization in the electron transport layer. This low-bias quenching is found to strongly determine maximum achievable efficiency, suggesting a need to refine materials selection and device design rules.
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