黑磷单晶的电学和电磁特性

A. A. Kharchenko, J. Fedotova, Valeryia Yu. Slabukho, A. Fedotov, A. Pashkevich, I. Svito, M. Bushinsky
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引用次数: 0

摘要

研究了在高压(~1 GPa)条件下,用6个金刚石砧在800℃下加热12 h制备的具有n型电导率的黑磷(b-P)单晶。电导率σ(Т,В)和霍尔常数Rh(Т,В)随温度(2 < Т < 300 K)和磁场(0 < В < 8 T)的变化规律分别在单波段和双波段模型中进行了分析。对实验σ(Т,В)和Rh(Т,В)曲线的拟合表明,晶体具有以下关键性质:(1)本征电导率类型;(2)电子和空穴浓度和迁移率近似相等;(3)电子和空穴电导率、浓度和迁移率的各向异性行为;(4)磁电阻的负、正贡献组合(磁阻效应)。在零磁场条件下,各向异性系数α = [σ′(Т) - σ′(Т)]/σ′(Т)在50-70 K以下为正,而在220 K以上,由于载流子浓度和迁移率对温度的特定依赖,其符号变为负。结果表明,在T < 25k和B < 6t时,相对磁阻效应(负磁阻效应)的负符号占主导地位,这可能是由结构紊乱引起的强局部化效应引起的。正MR符号(正磁阻效应)与载流子运动的洛伦兹机制有关,并在6-8 T的25 K以上磁场中表现出来。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical and galvanomagnetic properties of black phosphorus single crystals
Black phosphorus (b-P) single crystals having the n-type electrical conductivity produced in a high pressure set-up (~1 GPa) with six diamond anvils at 800 °C for 12 h have been studied. The electrical conductivity σ(Т,В) and the Hall constant Rh(Т,В) have been analyzed within one-band and two-band models as functions of temperature in the 2 < Т < 300 K range and magnetic field in the 0 < В < 8 T range. Fitting of the experimental σ(Т,В) and Rh(Т,В) curves suggests the following key properties of the crystals: (1) intrinsic conductivity type, (2) approximately equal electron and hole concentrations and mobilities, (3) anisotropic behavior of electron and hole conductivities, concentrations and mobilities and (4) combination of negative and positive contributions to magnetoresistance (magnetoresistive effect, MR). In a zero magnetic field the anisotropy coefficient α = [σа (Т) – σс (Т)]/σс (Т) below 50–70 K is positive whereas above 220 K its sign changes to negative due to a specific combination of the temperature dependences of carrier concentration and mobility. It has been shown that the negative sign of relative MR (negative magnetoresistive effect) dominates at T < 25 K and B < 6 T and is presumably caused by the effects of strong localization resulting from structural disorder. The positive MR sign (positive magnetoresistive effect) is associated with the Lorentz mechanism of carrier movement and exhibits itself above 25 K in 6–8 T magnetic fields.
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