用于芯片键合的低温选择性钴原子层沉积(ALD)表征

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2021-07-06 DOI:10.1109/IITC51362.2021.9537353

Ming-Jui Li, M. Breeden, V. Wang, Nyi Myat Khine Linn, C. Winter, A. Kummel, M. Bakir

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引用次数: 2

摘要

采用低温(200°C)选择性Co ALD对距离为200nm的铜焊片进行了Cu-Cu键合。通过扫描电镜(SEM)和能谱仪(EDS)对焊接试验台进行了表征，验证了该方法的可行性。利用原子力显微镜(AFM)和XPS测量了Co ALD在Cu和SiO2表面的选择性。

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Characterization of Low-Temperature Selective Cobalt Atomic Layer Deposition (ALD) for Chip Bonding

A Cu-Cu bonding approach using low temperature (200 °C) selective Co ALD is demonstrated for Cu pads that are separated by 200 nm. The bonding testbed is characterized before and after Co ALD by SEM and EDS to confirm the feasibility of the approach. AFM and XPS are used to measure the selectivity of Co ALD on Cu and SiO2 surfaces.

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2021 IEEE International Interconnect Technology Conference (IITC)

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