单面泵浦太赫兹增压器的设计与灵敏度分析

2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) Pub Date : 2021-08-29 DOI:10.1109/IRMMW-THz50926.2021.9567101

M. Vahdani, M. Fakhari, N. H. Matlis, F. Kärtner

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引用次数: 0

摘要

我们设计了一个太赫兹驱动的助推器，它能够将电子从55kev加速到430 keV以上的动能。该器件是一个3层分段结构，需要400µJ的单周太赫兹脉冲，中心频率为300 GHz。本文还研究了输出束流动力学对增压器输入参数和制造公差的敏感性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design and sensitivity analysis of a single sided pumped THz booster

We present the design of a THz driven booster which is capable of accelerating electrons from 55 keV up to above 430 keV kinetic energy. This device is a 3-layer segmented structure and requires a 400-µJ single-cycle THz pulse with center frequency at 300 GHz. Sensitivity of the output beam dynamics to the input parameters and manufacturing tolerances of the booster is also investigated in this paper.

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来源期刊

2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)

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