离子注入三维FinFET结构的高效蒙特卡罗模拟

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI:10.1109/IIT.2014.6939999

H. Kubotera, Yasuyuki Kayama, S. Nagura, Y. Usami, Alexander Schmidt, U. Kwon, Keun-Ho Lee, Youngkwan Park

{"title":"离子注入三维FinFET结构的高效蒙特卡罗模拟","authors":"H. Kubotera, Yasuyuki Kayama, S. Nagura, Y. Usami, Alexander Schmidt, U. Kwon, Keun-Ho Lee, Youngkwan Park","doi":"10.1109/IIT.2014.6939999","DOIUrl":null,"url":null,"abstract":"Precise simulation of ion implantation is a crucial base point of Front End Process (FEP) TCAD. To meet both simulation accuracy target and achieve short turnaround time (TAT), an improved statistical enhancement method has been implemented in Monte Carlo ion implantation simulator. The approach used for statistical enhancement allowed lower lateral doping profile noise comparing to conventional method while using just a fraction of simulation time. The results led to significant TAT reduction for advanced Logic and Memory FEP simulations.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Efficient Monte Carlo simulation of ion implantation into 3D FinFET structure\",\"authors\":\"H. Kubotera, Yasuyuki Kayama, S. Nagura, Y. Usami, Alexander Schmidt, U. Kwon, Keun-Ho Lee, Youngkwan Park\",\"doi\":\"10.1109/IIT.2014.6939999\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Precise simulation of ion implantation is a crucial base point of Front End Process (FEP) TCAD. To meet both simulation accuracy target and achieve short turnaround time (TAT), an improved statistical enhancement method has been implemented in Monte Carlo ion implantation simulator. The approach used for statistical enhancement allowed lower lateral doping profile noise comparing to conventional method while using just a fraction of simulation time. The results led to significant TAT reduction for advanced Logic and Memory FEP simulations.\",\"PeriodicalId\":6548,\"journal\":{\"name\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"volume\":\"14 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2014.6939999\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6939999","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

离子注入过程的精确模拟是前端工艺(FEP) TCAD的重要基础。为了满足仿真精度目标和缩短周转时间(TAT)，在蒙特卡罗离子注入模拟器中实现了一种改进的统计增强方法。与传统方法相比，用于统计增强的方法允许更低的横向掺杂轮廓噪声，而只使用一小部分模拟时间。结果导致先进的逻辑和记忆FEP模拟显著降低TAT。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Efficient Monte Carlo simulation of ion implantation into 3D FinFET structure

Precise simulation of ion implantation is a crucial base point of Front End Process (FEP) TCAD. To meet both simulation accuracy target and achieve short turnaround time (TAT), an improved statistical enhancement method has been implemented in Monte Carlo ion implantation simulator. The approach used for statistical enhancement allowed lower lateral doping profile noise comparing to conventional method while using just a fraction of simulation time. The results led to significant TAT reduction for advanced Logic and Memory FEP simulations.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 20th International Conference on Ion Implantation Technology (IIT)

自引率

0.00%

发文量