应变补偿GaInAsSb/AlGaAsSb多量子阱结构中量子受限Stark效应的观察

IF 1 Q4 QUANTUM SCIENCE & TECHNOLOGY

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI:10.1364/qo.1997.qthe.5

Yan Shi, Jian H. Zhao, J. Sarathy, G. Olsen, Hao Lee

{"title":"应变补偿GaInAsSb/AlGaAsSb多量子阱结构中量子受限Stark效应的观察","authors":"Yan Shi, Jian H. Zhao, J. Sarathy, G. Olsen, Hao Lee","doi":"10.1364/qo.1997.qthe.5","DOIUrl":null,"url":null,"abstract":"The quantum confined Stark effect (QCSE) has been observed in quantum well structures of many different material systems, such as GaAs/AlGaAs [1]-[3] and InGaAs/InP [4]. Because of the steep rise at the absorption edge, coupled with the very high excitonic resonance peak, and its shift with the applied electric field, the QCSE has many applications in optoelectronics.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"46 1","pages":""},"PeriodicalIF":1.0000,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Observation of Quantum Confined Stark Effect in Strain Compensated GaInAsSb/AlGaAsSb Multiple Quantum Well Structures\",\"authors\":\"Yan Shi, Jian H. Zhao, J. Sarathy, G. Olsen, Hao Lee\",\"doi\":\"10.1364/qo.1997.qthe.5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The quantum confined Stark effect (QCSE) has been observed in quantum well structures of many different material systems, such as GaAs/AlGaAs [1]-[3] and InGaAs/InP [4]. Because of the steep rise at the absorption edge, coupled with the very high excitonic resonance peak, and its shift with the applied electric field, the QCSE has many applications in optoelectronics.\",\"PeriodicalId\":44695,\"journal\":{\"name\":\"Semiconductor Physics Quantum Electronics & Optoelectronics\",\"volume\":\"46 1\",\"pages\":\"\"},\"PeriodicalIF\":1.0000,\"publicationDate\":\"1997-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Physics Quantum Electronics & Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/qo.1997.qthe.5\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"QUANTUM SCIENCE & TECHNOLOGY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Physics Quantum Electronics & Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/qo.1997.qthe.5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"QUANTUM SCIENCE & TECHNOLOGY","Score":null,"Total":0}

引用次数: 0

摘要

在许多不同材料体系的量子阱结构中，如GaAs/AlGaAs[1]-[3]和InGaAs/InP[4]，已经观察到量子受限Stark效应(QCSE)。由于吸收边缘的急剧上升，加上非常高的激子共振峰，以及它随外加电场的位移，QCSE在光电子学中有许多应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Observation of Quantum Confined Stark Effect in Strain Compensated GaInAsSb/AlGaAsSb Multiple Quantum Well Structures

The quantum confined Stark effect (QCSE) has been observed in quantum well structures of many different material systems, such as GaAs/AlGaAs [1]-[3] and InGaAs/InP [4]. Because of the steep rise at the absorption edge, coupled with the very high excitonic resonance peak, and its shift with the applied electric field, the QCSE has many applications in optoelectronics.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Semiconductor Physics Quantum Electronics & Optoelectronics QUANTUM SCIENCE & TECHNOLOGY-

CiteScore

1.80

自引率

22.20%

发文量

审稿时长

15 weeks