用于高级执行器的低烧结pzt陶瓷

A. Schonecker, H. Gesemann, L. Seffner
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引用次数: 11

摘要

在多层致动器制造的要求下,为降低PZT粉末的烧结温度,人们做了很多努力。主要原因是抑制pbo蒸发和成本有效的电极材料的可用性。通过在烧结过程中形成液相,我们成功地将软pzt的T/sub /s /降低到780/spl℃。因此,制造具有高表面体积比的部件成为可能。例如,致密PZT厚膜(厚度50…150 /spl mu/m),制备出高残余极化(20 /spl mu/C/cm/sup 2/)和高机械强度。为了提高工作频率和温度,研究了低烧结硬质压电陶瓷的发展。这一任务变得更加困难,因为大多数共晶添加剂都倾向于降低居里温度T/sub c/。然而,发现了一种特殊的改性剂,使硬pzt(即T/sub c/=350/spl℃/ c)在T/sub s/=1050/spl℃/ c/ 2h时致密化。本文报道了我国低烧结pzt陶瓷的成分研究进展及其对高级执行器设计和性能的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low-sintering PZT-ceramics for advanced actuators
Much effort has been made to reduce sintering temperature T/sub s/ of PZT powders, driven by the demands of multilayer actuator fabrication. Suppression of PbO-evaporation and usability of cost effective electrode materials have been the main reasons. We succeeded in reducing T/sub s/ of soft-PZT down to 780/spl deg/C by creating liquid phases during sintering. Consequently, the fabrication of components with high surface to volume ratio became possible. For example, dense PZT thick films (thickness 50...150 /spl mu/m) on alumina, showing high remanent polarization (20 /spl mu/C/cm/sup 2/) and high mechanical strength were prepared. In order to raise operation frequency and temperature the development of low-sintering hard-PZT has been investigated. This task turned out to be more difficult, because most eutectic additives tend to reduce Curie temperature T/sub c/ likewise. Nevertheless, a special modification has been found giving a hard-PZT (i.e. T/sub c/=350/spl deg/C) that densifies already at T/sub s/=1050/spl deg/C/2h. The paper reports on our compositional development of low-sintering PZT-ceramics together with its impact on the design and performance of advanced actuators.
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