片上小分辨率振荡器变频操作实电路时延测量方法

Q4 Engineering
K. Shimamura, Naohiro Ikeda
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引用次数: 1

摘要

随着半导体工艺小型化的发展,由老化引起的延迟退化日益严重,威胁着芯片的可靠性。已知延迟退化量与电路和工作负载有关,但以往的评估都是基于仿真,实际工作负载下真实电路的延迟退化测量尚未见报道。本文提出了一种真实的电路时延测量方法,该方法能够达到足够的精度来测量与电路和工作负载相关的时延退化。该方法利用片上振荡器为内部电路提供高分辨率的变频时钟。内部电路执行测试模式以激活不同频率的关键路径,并确定可以获得正确结果的最大频率。最大频率对应于测试模式激活的关键路径的延迟。时钟倍增提高了延迟分辨率,重复测量减少了由时间相关的随机延迟变化引起的测量误差。该方法已在65 nm低功耗制程测试芯片上实现。变频振荡器仅采用标准单元,设计具有自动布局流程,无需任何定时调谐。该方法的面积开销为总随机逻辑的0.09%。评价结果表明,平均测量精度达到0.18%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Real Circuit Delay Measurement Method by Variable Frequency Operation with On-Chip Fine Resolution Oscillator
With the progress of semiconductor process miniaturization, delay degradation by aging increases and threatens the reliability of fabricated chips. The amount of delay degradation is known to be circuit and workload dependent, but previous evaluations are based on simulations, and delay degradation measurement of real circuit under realistic workload has not been reported yet. This paper proposes real circuit delay measurement method, which achieves enough accuracy to measure circuit and workload dependent delay degradation. In the proposed method, onchip oscillator supplies fine resolution variable frequency clock to internal circuit. Internal circuit execute test pattern to activate critical paths at various frequency and determine the maximum frequency at which correct results can be obtained. The maximum frequency corresponds to the delay of the critical paths activated by the test pattern. Clock multiplication improves delay resolution, and repetitive measurement reduces measurement error caused by time dependent random delay variation. The proposed method has been implemented on a 65 nm low power process test chip. Variable frequency oscillator utilizes only standard cells and is designed with automatic layout flow without any timing tuning. The area overhead of the proposed method is 0.09% of the total random logic. The evaluation result show that 0.18% average measurement accuracy has been achieved.
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来源期刊
IPSJ Transactions on System LSI Design Methodology
IPSJ Transactions on System LSI Design Methodology Engineering-Electrical and Electronic Engineering
CiteScore
1.20
自引率
0.00%
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