基于sat的ATPG早期寿命失效检测

M. Sauer, Young Moon Kim, Jun Seomun, Hyung-Ock Kim, K. Do, J. Choi, Kee-sup Kim, S. Mitra, B. Becker
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引用次数: 17

摘要

早期寿命失效(ELF)是由于可能通过制造测试但在现场早期失效的弱芯片造成的,比预期的产品寿命要早得多。最近对一系列技术的实验研究表明,ELF缺陷导致逻辑电路内部节点在功能故障发生之前随时间变化的延迟。这种延迟的变化不同于由电路老化机制(如偏置温度不稳定性)引起的延迟退化。传统的过渡故障或鲁棒路径延迟故障测试模式不适合检测这种elf引起的延迟变化,因为它们没有精确地模拟要求检测条件。在本文中,我们提出了一种基于布尔可满足性(SAT)的自动测试模式生成(ATPG)技术,用于检测给定电路中所有门的elf诱导延迟变化。我们的仿真结果,使用来自工业OpenSPARC T2设计的各种电路块以及标准基准,证明了我们的方法在实现高覆盖率的elf引起的延迟变化检测方面的有效性和实用性。我们还演示了我们的方法对制造过程变化的鲁棒性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Early-life-failure detection using SAT-based ATPG
Early-life failures (ELF) result from weak chips that may pass manufacturing tests but fail early in the field, much earlier than expected product lifetime. Recent experimental studies over a range of technologies have demonstrated that ELF defects result in changes in delays over time inside internal nodes of a logic circuit before functional failure occurs. Such changes in delays are distinct from delay degradation caused by circuit aging mechanisms such as Bias Temperature Instability. Traditional transition fault or robust path delay fault test patterns are inadequate for detecting such ELF-induced changes in delays because they do not model the demanding detection conditions precisely. In this paper, we present an automatic test pattern generation (ATPG) technique based on Boolean Satisfiability (SAT) for detecting ELF-induced delay changes at all gates in a given circuit. Our simulation results, using various circuit blocks from the industrial OpenSPARC T2 design as well as standard benchmarks, demonstrate the effectiveness and practicality of our approach in achieving high coverage of ELF-induced delay change detection. We also demonstrate the robustness of our approach to manufacturing process variations.
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