a - IGZO薄膜晶体管的耐辐射性能研究

2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) Pub Date : 2016-05-20 DOI:10.1109/RTEICT.2016.7808148

G. Dayananda, C. Rai, A. Jayarama, Hyun Jae Kim

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引用次数: 3

摘要

在1737 corning玻璃上制备了非晶铟镓锌氧化物(a-IGZO)薄膜晶体管，研究了不同辐照剂量下8-MeV电子辐照对a-IGZO薄膜晶体管不同参数的影响。当剂量大于1kGy时，薄膜晶体管表现出轻微的降解。辐照后，饱和电子迁移率()下降。实验结果表明，辐照后的阈值电压(Vth)和离子/断比均有所提高。在10kGy电子辐照后，亚阈值振荡(SS)开始增大，并保持不变。然而，器件参数没有剧烈变化，因此这些tft可以用于航天器环境和核电站。

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Study of radiation resistance property of a — IGZO thin film transistors

Amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin film transistors (TFTs) were fabricated on 1737 corning glass are investigated effects of 8-MeV electron irradiation with different irradiation dosage on the different parameters of a-IGZO thin film transistors. The thin film transistors show slight degradation for dosage greater than 1kGy. After radiation, a decrease of saturation electron mobility () was observed. The experimental results show threshold voltage(Vth) and Ion /Ioff ratio were increased after radiation. Initially the sub threshold swing(SS) increased and remained constant after 10kGy electron irradiation. However there is no drastic variation in device parameters, hence these TFTs can be used in spacecraft environments and nuclear plants.

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来源期刊

2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT)

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