金属离子漂移在杂化键合集成模型中的应用——基于失效准则的演化

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870476

Manzanarez Hervé, Moreau Stéphane, Cueto Olga

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引用次数: 2

摘要

建立了铜离子在杂化键集成情况下的漂移模型。将连续性方程与泊松方程耦合，并假设铜离子浓度饱和。初步实现了一维几何模拟来验证模型，并通过观察渗透时间(TTP)对杂化键的二维几何模拟进行了分析。

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Metallic ions drift in hybrid bonding integration modeling, towards the evolution of failure criterion

Copper ions drift is modeled in the case of hybrid bonding integration. The continuity equation is coupled to the Poisson’s equation and a copper ion concentration saturation is assumed. A 1D geometry simulation is initially realized to validate the model and 2D geometry simulations of hybrid bonding are analyzed by looking the time to percolate (TTP).

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来源期刊

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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