同时线段摄动和伪化的EUVL中耀斑最小化

S. Paul, Pritha Banerjee, S. Sur-Kolay
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引用次数: 1

摘要

极紫外光刻(EUVL)存在由光斑引起的图案畸变缺陷,这是由所用掩模表面的不规则反射引起的。虽然基于(a)伪化和(b)导线段扰动的技术显著减少了耀斑,但每种技术都有自己的优点和缺点。与早期的工作不同,每种减少耀斑的方法都是独立应用的,在本文中,我们使用基于整数线性规划(ILP)的公式,在路由后阶段的多层框架中广泛研究了同时伪化和线段扰动对耀斑的影响以及所需的虚拟填充量。实验结果表明,与初始路由布局相比,最大耀斑电平平均降低了29%。除此之外,与单独的线摄动方法相比,观察到最大耀斑平均减少19%。此外,在我们的方法中,与单独应用伪化技术相比,平均降低了35%的伪要求,以减少耀斑。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Minimization of Flare in EUVL by Simultaneous Wire Segment Perturbation and Dummification
Extreme Ultraviolet Lithography (EUVL) suffers from pattern distortion defects caused by flare, which is irregular reflection from the surface of the mask used. While techniques based on (a) dummification and (b) perturbation of wire segments have reduced flare notably, each has its own merits and demerits. Unlike earlier works where each method for flare reduction is applied independently, in this paper we extensively study the effects on flare and the amount of dummy fills required by simultaneous dummification and wire segment perturbation using an Integer Linear Programming (ILP) based formulation in a multilevel framework at the post-routing stage. Experimental results show an average reduction of maximum flare level by 29% compared to that in the initial routed layout. In addition to that, an average reduction of maximum flare by 19% is observed compared to the method of wire perturbation alone. Moreover, in our method 35% reduction in dummy requirement on average is achieved compared to the application of dummification technique alone for the reduction of flare.
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