{"title":"极无孔超低k SiOCH (k=2.3)，具有足够的模量(>10 GPa)，高Cu扩散势垒，对大半径中性束增强CVD形成的集成过程具有高耐受性","authors":"Y. Kikuchi, A. Wada, S. Samukawa","doi":"10.1109/IITC.2013.6615563","DOIUrl":null,"url":null,"abstract":"We developed a practical large-radius neutral beam enhanced CVD with a dimethoxy tetramethy ldisiloxane (DMOTMDS) to form low-k SiOCH film on 8-inch Si wafers. We fabricated extremely non-porous film with an ultra-low k-value of 2.3 and a sufficient modulus (>10 GPa). This particular film did not show any damage from the oxygen plasma and acid or alkali solutions used in the fabrication process. Furthermore, the dense film almost completely resisted Cu diffusion into the film during thermal annealing.","PeriodicalId":6377,"journal":{"name":"2013 IEEE International Interconnect Technology Conference - IITC","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Extremely non-porous ultra-low-k SiOCH (k=2.3) with sufficient modulus (>10 GPa), high Cu diffusion barrier and high tolerance for integration process formed by large-radius neutral-beam enhanced CVD\",\"authors\":\"Y. Kikuchi, A. Wada, S. Samukawa\",\"doi\":\"10.1109/IITC.2013.6615563\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We developed a practical large-radius neutral beam enhanced CVD with a dimethoxy tetramethy ldisiloxane (DMOTMDS) to form low-k SiOCH film on 8-inch Si wafers. We fabricated extremely non-porous film with an ultra-low k-value of 2.3 and a sufficient modulus (>10 GPa). This particular film did not show any damage from the oxygen plasma and acid or alkali solutions used in the fabrication process. Furthermore, the dense film almost completely resisted Cu diffusion into the film during thermal annealing.\",\"PeriodicalId\":6377,\"journal\":{\"name\":\"2013 IEEE International Interconnect Technology Conference - IITC\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Interconnect Technology Conference - IITC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2013.6615563\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Interconnect Technology Conference - IITC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2013.6615563","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Extremely non-porous ultra-low-k SiOCH (k=2.3) with sufficient modulus (>10 GPa), high Cu diffusion barrier and high tolerance for integration process formed by large-radius neutral-beam enhanced CVD
We developed a practical large-radius neutral beam enhanced CVD with a dimethoxy tetramethy ldisiloxane (DMOTMDS) to form low-k SiOCH film on 8-inch Si wafers. We fabricated extremely non-porous film with an ultra-low k-value of 2.3 and a sufficient modulus (>10 GPa). This particular film did not show any damage from the oxygen plasma and acid or alkali solutions used in the fabrication process. Furthermore, the dense film almost completely resisted Cu diffusion into the film during thermal annealing.
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