{"title":"增强IBIS在同步开关噪声(SSN)和其他功率完整性相关仿真中的建模能力——建议、实现和验证","authors":"Zhiping Yang, Syed Huq, Vinu Arumugham, I. Park","doi":"10.1109/ISEMC.2005.1513598","DOIUrl":null,"url":null,"abstract":"IBIS models are widely used in I/O related signal integrity simulations. This paper points out the problems with the present IBIS model in power integrity related simulations. A new proposal of adding some additional information to the existing IBIS standard to expand its capability in SSN and other power integrity related simulations are introduced. The processes to extract this information from transistor-level Spice model and implement the new proposal in existing IBIS tools are illustrated by using an example in HSPICE. The accuracy of the new proposed model is verified in simulations with nonideal power supply","PeriodicalId":6459,"journal":{"name":"2005 International Symposium on Electromagnetic Compatibility, 2005. EMC 2005.","volume":"137 1","pages":"672-677"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Enhancement of IBIS modeling capability in simutanous switching noise (SSN) and other power integrity related simulations - proposal, implementation, and validation\",\"authors\":\"Zhiping Yang, Syed Huq, Vinu Arumugham, I. Park\",\"doi\":\"10.1109/ISEMC.2005.1513598\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"IBIS models are widely used in I/O related signal integrity simulations. This paper points out the problems with the present IBIS model in power integrity related simulations. A new proposal of adding some additional information to the existing IBIS standard to expand its capability in SSN and other power integrity related simulations are introduced. The processes to extract this information from transistor-level Spice model and implement the new proposal in existing IBIS tools are illustrated by using an example in HSPICE. The accuracy of the new proposed model is verified in simulations with nonideal power supply\",\"PeriodicalId\":6459,\"journal\":{\"name\":\"2005 International Symposium on Electromagnetic Compatibility, 2005. EMC 2005.\",\"volume\":\"137 1\",\"pages\":\"672-677\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 International Symposium on Electromagnetic Compatibility, 2005. EMC 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEMC.2005.1513598\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 International Symposium on Electromagnetic Compatibility, 2005. EMC 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEMC.2005.1513598","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enhancement of IBIS modeling capability in simutanous switching noise (SSN) and other power integrity related simulations - proposal, implementation, and validation
IBIS models are widely used in I/O related signal integrity simulations. This paper points out the problems with the present IBIS model in power integrity related simulations. A new proposal of adding some additional information to the existing IBIS standard to expand its capability in SSN and other power integrity related simulations are introduced. The processes to extract this information from transistor-level Spice model and implement the new proposal in existing IBIS tools are illustrated by using an example in HSPICE. The accuracy of the new proposed model is verified in simulations with nonideal power supply