超尺度HfS2和黑磷mosfet中耗散DFT输运的原子建模求解器

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870436

A. Afzalian, G. Pourtois

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引用次数: 14

摘要

开发了一种基于DFT-NEGF的最先进的原子建模求解器(ATOMOS)，并用于评估栅极长度为5 nm的各种单层过渡金属-二硫化物和黑磷(BP) mosfet的物理和基本性能潜力，包括电子-声子散射的影响。我们的研究强调了HfS2良好的可扩展性和驱动电流潜力，以及光声子散射对BP的影响。

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ATOMOS: An ATomistic MOdelling Solver for dissipative DFT transport in ultra-scaled HfS2 and Black phosphorus MOSFETs

A state-of-the-art DFT-NEGF based ATOmistic - MOdelling Solver (ATOMOS) was developed and used to assess the physics and fundamental-performance potential of various scaled mono-layer transition-metal-dichalcogenides and blackphosphorus (BP) MOSFETs down to a gate length of 5 nm, including the effect of electron-phonon scattering. Our study highlights the good scalability and drive-current potential of HfS2 and the impact of optical-phonon scattering for BP.

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2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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