Structural and Electrical Properties of Pure and Samarium Doped MgFe2O4 Nanoparticles for Resistive RAM Applications

Spinel ferrites nanoparticles have attracted the attention of researcher for memory storage devices. We have synthesized MgFeO4 pure sample and MgFe1.8Sm0.2O4 doped sample via solgel technique. The study of structural, electrical, dielectric, and I-V properties were studied of synthesized spinel magnesium ferrites nanoparticles. X-ray diffraction (XRD) confirmed the spinel structure of both compositions. The frequency dependent AC conductivity, dielectric constant, dielectric tangent loss, was studied in the range of 20Hz to 3MHz. I-V measurements has been done for the resistive switching properties. I-V curves of both compositions in the current study exhibits the formation of hysteresis loop. The hysteresis loop behavior shows that with the addition of samarium the trend of loop increases which plays crucial role as a Resistive Random-Access Memory (ReRAM) application in switching memory storage devices.