Mingshan Liu, V. Schlykow, J. Hartmann, J. Knoch, D. Grutzmacher, D. Buca, Qing-Tai Zhao
{"title":"垂直异质结Ge0.92 Sn0.08 /Ge GAA纳米线pmosfet:低SS为67 mV/dec，小DIBL为24 mV/V，最高Gm为870 μS/μm","authors":"Mingshan Liu, V. Schlykow, J. Hartmann, J. Knoch, D. Grutzmacher, D. Buca, Qing-Tai Zhao","doi":"10.1109/vlsitechnology18217.2020.9265090","DOIUrl":null,"url":null,"abstract":"We demonstrate high performance vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around (GAA) nanowire (NW) pMOSFETs enabled by a top-down approach, a self-limiting digital etching and NiGeSn metallization. Thanks to the GAA NW geometry and EOT scaling, low SS of 67 mV/dec, small DIBL of 24 mV/V, and a high ION/IOFF ratio of ~106 are achieved in the smallest NW device with a diameter down to 25 nm. Furthermore, record high Gm,ext of ~870 μS/μm and the best quality factor Q = Gm,ext/SSsat of 9.1 are obtained for all reported GeSn-based pFETs.","PeriodicalId":6850,"journal":{"name":"2020 IEEE Symposium on VLSI Technology","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Vertical Heterojunction Ge0.92 Sn0.08 /Ge GAA Nanowire pMOSFETs: Low SS of 67 mV/dec, Small DIBL of 24 mV/V and Highest Gm,ext of 870 μS/μm\",\"authors\":\"Mingshan Liu, V. Schlykow, J. Hartmann, J. Knoch, D. Grutzmacher, D. Buca, Qing-Tai Zhao\",\"doi\":\"10.1109/vlsitechnology18217.2020.9265090\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate high performance vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around (GAA) nanowire (NW) pMOSFETs enabled by a top-down approach, a self-limiting digital etching and NiGeSn metallization. Thanks to the GAA NW geometry and EOT scaling, low SS of 67 mV/dec, small DIBL of 24 mV/V, and a high ION/IOFF ratio of ~106 are achieved in the smallest NW device with a diameter down to 25 nm. Furthermore, record high Gm,ext of ~870 μS/μm and the best quality factor Q = Gm,ext/SSsat of 9.1 are obtained for all reported GeSn-based pFETs.\",\"PeriodicalId\":6850,\"journal\":{\"name\":\"2020 IEEE Symposium on VLSI Technology\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsitechnology18217.2020.9265090\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnology18217.2020.9265090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Vertical Heterojunction Ge0.92 Sn0.08 /Ge GAA Nanowire pMOSFETs: Low SS of 67 mV/dec, Small DIBL of 24 mV/V and Highest Gm,ext of 870 μS/μm
We demonstrate high performance vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around (GAA) nanowire (NW) pMOSFETs enabled by a top-down approach, a self-limiting digital etching and NiGeSn metallization. Thanks to the GAA NW geometry and EOT scaling, low SS of 67 mV/dec, small DIBL of 24 mV/V, and a high ION/IOFF ratio of ~106 are achieved in the smallest NW device with a diameter down to 25 nm. Furthermore, record high Gm,ext of ~870 μS/μm and the best quality factor Q = Gm,ext/SSsat of 9.1 are obtained for all reported GeSn-based pFETs.
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