{"title":"溶胶-凝胶衍生PZT和PLZT薄膜的表征","authors":"R. Kurchania, S. J. Milne","doi":"10.1109/ISAF.1996.602785","DOIUrl":null,"url":null,"abstract":"Lead zirconate titanate (PZT) and lead lanthanum zirconate titanate (PLZT) precursor sols were prepared using a diol based sol-gel route. Thin films were deposited by spin coating onto PtrTi/SiO/sub 2//Si substrates. The effects of lanthanum incorporating up to 10 mol% lanthanum to the base PZT 53/47 composition, and the effects of firing temperature (500-700/spl deg/C) on crystallization, microstructure, ferroelectric and dielectric properties have been investigated. Films fired at 700/spl deg/C for 15 minutes with 0, 2 and 5 mole percent lanthanum levels had values of remanent polarization of 31, 23 and 14 /spl mu/C cm/sup -2/ (at 300 kV cm/sup -1/, 60 Hz) and corresponding relative permittivity values of 1485, 830 and 700 respectively.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"57 1","pages":"447-450 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization of sol-gel derived PZT and PLZT thin films\",\"authors\":\"R. Kurchania, S. J. Milne\",\"doi\":\"10.1109/ISAF.1996.602785\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Lead zirconate titanate (PZT) and lead lanthanum zirconate titanate (PLZT) precursor sols were prepared using a diol based sol-gel route. Thin films were deposited by spin coating onto PtrTi/SiO/sub 2//Si substrates. The effects of lanthanum incorporating up to 10 mol% lanthanum to the base PZT 53/47 composition, and the effects of firing temperature (500-700/spl deg/C) on crystallization, microstructure, ferroelectric and dielectric properties have been investigated. Films fired at 700/spl deg/C for 15 minutes with 0, 2 and 5 mole percent lanthanum levels had values of remanent polarization of 31, 23 and 14 /spl mu/C cm/sup -2/ (at 300 kV cm/sup -1/, 60 Hz) and corresponding relative permittivity values of 1485, 830 and 700 respectively.\",\"PeriodicalId\":14772,\"journal\":{\"name\":\"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics\",\"volume\":\"57 1\",\"pages\":\"447-450 vol.1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-08-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.1996.602785\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1996.602785","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of sol-gel derived PZT and PLZT thin films
Lead zirconate titanate (PZT) and lead lanthanum zirconate titanate (PLZT) precursor sols were prepared using a diol based sol-gel route. Thin films were deposited by spin coating onto PtrTi/SiO/sub 2//Si substrates. The effects of lanthanum incorporating up to 10 mol% lanthanum to the base PZT 53/47 composition, and the effects of firing temperature (500-700/spl deg/C) on crystallization, microstructure, ferroelectric and dielectric properties have been investigated. Films fired at 700/spl deg/C for 15 minutes with 0, 2 and 5 mole percent lanthanum levels had values of remanent polarization of 31, 23 and 14 /spl mu/C cm/sup -2/ (at 300 kV cm/sup -1/, 60 Hz) and corresponding relative permittivity values of 1485, 830 and 700 respectively.
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