{"title":"用于高速ADC应用的0.35µm CMOS比较电路","authors":"S. Sheikhaei, S. Mirabbasi, André Ivanov","doi":"10.1109/ISCAS.2005.1466040","DOIUrl":null,"url":null,"abstract":"A high-speed differential clocked comparator circuit is presented. The comparator consists of a preamplifier and a latch stage followed by a dynamic latch that operates as an output sampler. The output sampler circuit consists of a full transmission gate (TG) and two inverters. The use of this sampling stage results in a reduction in the power consumption of this high-speed comparator. Simulations show that charge injection of the TG adds constructively to the sampled signal value, therefore amplifying the sampled signal with a modest gain of 1.15. Combined with the high gain of the inverters, the sampled signals are amplified toward the rail voltages. This comparator is designed and fabricated in a 0.35 /spl mu/m standard digital CMOS technology. Measurement results show a sampling frequency of 1 GHz with 16 mV resolution for a 1 V input signal range and 2 mW power consumption from a 3.3 V supply. The architecture can be scaled down to smaller feature sizes and lower supply voltages.","PeriodicalId":91083,"journal":{"name":"IEEE International Symposium on Circuits and Systems proceedings. IEEE International Symposium on Circuits and Systems","volume":"4 1","pages":"6134-6137"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"A 0.35µm CMOS comparator circuit for high-speed ADC applications\",\"authors\":\"S. Sheikhaei, S. Mirabbasi, André Ivanov\",\"doi\":\"10.1109/ISCAS.2005.1466040\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high-speed differential clocked comparator circuit is presented. The comparator consists of a preamplifier and a latch stage followed by a dynamic latch that operates as an output sampler. The output sampler circuit consists of a full transmission gate (TG) and two inverters. The use of this sampling stage results in a reduction in the power consumption of this high-speed comparator. Simulations show that charge injection of the TG adds constructively to the sampled signal value, therefore amplifying the sampled signal with a modest gain of 1.15. Combined with the high gain of the inverters, the sampled signals are amplified toward the rail voltages. This comparator is designed and fabricated in a 0.35 /spl mu/m standard digital CMOS technology. Measurement results show a sampling frequency of 1 GHz with 16 mV resolution for a 1 V input signal range and 2 mW power consumption from a 3.3 V supply. The architecture can be scaled down to smaller feature sizes and lower supply voltages.\",\"PeriodicalId\":91083,\"journal\":{\"name\":\"IEEE International Symposium on Circuits and Systems proceedings. IEEE International Symposium on Circuits and Systems\",\"volume\":\"4 1\",\"pages\":\"6134-6137\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Symposium on Circuits and Systems proceedings. IEEE International Symposium on Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCAS.2005.1466040\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Symposium on Circuits and Systems proceedings. IEEE International Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2005.1466040","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.35µm CMOS comparator circuit for high-speed ADC applications
A high-speed differential clocked comparator circuit is presented. The comparator consists of a preamplifier and a latch stage followed by a dynamic latch that operates as an output sampler. The output sampler circuit consists of a full transmission gate (TG) and two inverters. The use of this sampling stage results in a reduction in the power consumption of this high-speed comparator. Simulations show that charge injection of the TG adds constructively to the sampled signal value, therefore amplifying the sampled signal with a modest gain of 1.15. Combined with the high gain of the inverters, the sampled signals are amplified toward the rail voltages. This comparator is designed and fabricated in a 0.35 /spl mu/m standard digital CMOS technology. Measurement results show a sampling frequency of 1 GHz with 16 mV resolution for a 1 V input signal range and 2 mW power consumption from a 3.3 V supply. The architecture can be scaled down to smaller feature sizes and lower supply voltages.