反应溅射制备cu掺杂TiO2薄膜染料降解研究

M. Sreedhar, S. S. Prasath, J. Brijitta
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引用次数: 2

摘要

二氧化钛是一种广泛应用于染料降解的光催化剂,金属掺杂可以增强其光催化活性。在这项工作中,射频(RF)溅射在300°C的衬底温度下,在玻璃和硅衬底上制备了坚固、透明的Cu掺杂TiO2薄膜。采用x射线衍射(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)和紫外-可见光谱对材料进行了物相分析、表面形貌和光学研究。在300℃衬底温度下沉积的TiO2薄膜的XRD谱图表明其为纯锐钛矿相。低铜掺杂TiO2薄膜呈现结晶性质;而随着掺杂剂浓度的增加,薄膜趋于无定形。此外,发现Cu掺杂后TiO2的光学带隙分别从~ 3.5 eV减小到~ 2.5 eV。通过监测亚甲基蓝(MB)染料在紫外照射下氧化降解的时间函数,评价了Cu掺杂TiO2薄膜的应用潜力。在这里,我们可以实现1Cu/TiO2薄膜(中间掺杂)暴露于90分钟照射下的最高降解率为~ 32%。二氧化钛是一种广泛应用于染料降解的光催化剂,金属掺杂可以增强其光催化活性。在这项工作中,射频(RF)溅射在300°C的衬底温度下,在玻璃和硅衬底上制备了坚固、透明的Cu掺杂TiO2薄膜。采用x射线衍射(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)和紫外-可见光谱对材料进行了物相分析、表面形貌和光学研究。在300℃衬底温度下沉积的TiO2薄膜的XRD谱图表明其为纯锐钛矿相。低铜掺杂TiO2薄膜呈现结晶性质;而随着掺杂剂浓度的增加,薄膜趋于无定形。此外,发现Cu掺杂后TiO2的光学带隙分别从~ 3.5 eV减小到~ 2.5 eV。通过对Cu掺杂TiO2薄膜氧化程度的监测,评价了其应用潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dye degradation studies on Cu-doped TiO2 thin films developed by reactive sputtering
TiO2 is one of the widely used photocatalysts for dye degradation and doping it with metals has shown to enhance its photocatalytic activity. In this work, Radio Frequency (RF) sputtering was used to fabricate robust, transparent Cu- doped TiO2 thin films on glass and silicon substrates at 300°C substrate temperature. Phase analysis, surface morphology and optical studies were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and UV–vis spectroscopy respectively. The XRD pattern of TiO2 films deposited at 300°C substrate temperature shows that they are in the pure anatase phase. The low copper doped TiO2 films showed crystalline nature; whereas with an increase in dopant concentration, the films tend to be amorphous. Moreover, the optical band gap of TiO2 was found to decrease from∼3.5 to ∼2.5 eV respectively upon Cu doping. The application potential of the Cu- doped TiO2 thin films was evaluated by monitoring the oxidative degradation of methylene blue (MB) dye under UV irradiation as a function of time. Here we could achieve the highest degradation rate of ∼32% for 1Cu/TiO2 films (intermediate doping) exposed to 90 min irradiation.TiO2 is one of the widely used photocatalysts for dye degradation and doping it with metals has shown to enhance its photocatalytic activity. In this work, Radio Frequency (RF) sputtering was used to fabricate robust, transparent Cu- doped TiO2 thin films on glass and silicon substrates at 300°C substrate temperature. Phase analysis, surface morphology and optical studies were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and UV–vis spectroscopy respectively. The XRD pattern of TiO2 films deposited at 300°C substrate temperature shows that they are in the pure anatase phase. The low copper doped TiO2 films showed crystalline nature; whereas with an increase in dopant concentration, the films tend to be amorphous. Moreover, the optical band gap of TiO2 was found to decrease from∼3.5 to ∼2.5 eV respectively upon Cu doping. The application potential of the Cu- doped TiO2 thin films was evaluated by monitoring the oxidative degrad...
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