Zhiqiang Wei, T. Ninomiya, S. Muraoka, K. Katayama, R. Yasuhara, T. Mikawa
{"title":"ReRAM的切换和可靠性机制","authors":"Zhiqiang Wei, T. Ninomiya, S. Muraoka, K. Katayama, R. Yasuhara, T. Mikawa","doi":"10.1109/IITC.2014.6831832","DOIUrl":null,"url":null,"abstract":"Taking advantage of electron hopping between oxygen vacancies in filaments, ReRAM switching is caused by oxygen vacancy migration. We have developed an oxygen diffusion retention model, based on this switching mechanism, for both typical bits and outlier bits. Degradation of resistance of typical bits is due to the oxygen vacancy profile in the filament changing during oxygen diffusion, and the retention failure of outlier bits is caused by the critical percolation path being broken within the filament during oxygen diffusion.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"6 1","pages":"349-352"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Switching and reliability mechanisms for ReRAM\",\"authors\":\"Zhiqiang Wei, T. Ninomiya, S. Muraoka, K. Katayama, R. Yasuhara, T. Mikawa\",\"doi\":\"10.1109/IITC.2014.6831832\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Taking advantage of electron hopping between oxygen vacancies in filaments, ReRAM switching is caused by oxygen vacancy migration. We have developed an oxygen diffusion retention model, based on this switching mechanism, for both typical bits and outlier bits. Degradation of resistance of typical bits is due to the oxygen vacancy profile in the filament changing during oxygen diffusion, and the retention failure of outlier bits is caused by the critical percolation path being broken within the filament during oxygen diffusion.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":\"6 1\",\"pages\":\"349-352\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2014.6831832\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2014.6831832","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Taking advantage of electron hopping between oxygen vacancies in filaments, ReRAM switching is caused by oxygen vacancy migration. We have developed an oxygen diffusion retention model, based on this switching mechanism, for both typical bits and outlier bits. Degradation of resistance of typical bits is due to the oxygen vacancy profile in the filament changing during oxygen diffusion, and the retention failure of outlier bits is caused by the critical percolation path being broken within the filament during oxygen diffusion.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
