{"title":"用于光电器件的广义多粒子漂移扩散模拟器","authors":"D. Rossi, M. Auf der Maur, A. Di Carlo","doi":"10.1109/SISPAD.2019.8870557","DOIUrl":null,"url":null,"abstract":"We present a generalized multi-particle drift-diffusion model capable to overcome the limitations imposed by the classic drift-diffusion model. It was designed as flexible and reusable tool that takes into account explicitly multiple carrier populations, whether charged and neutral, allowing to consider also e.g. exciton transport or ionic motion, crucial for a relevant number of device structures.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"143 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A generalized multi-particle drift-diffusion simulator for optoelectronic devices\",\"authors\":\"D. Rossi, M. Auf der Maur, A. Di Carlo\",\"doi\":\"10.1109/SISPAD.2019.8870557\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a generalized multi-particle drift-diffusion model capable to overcome the limitations imposed by the classic drift-diffusion model. It was designed as flexible and reusable tool that takes into account explicitly multiple carrier populations, whether charged and neutral, allowing to consider also e.g. exciton transport or ionic motion, crucial for a relevant number of device structures.\",\"PeriodicalId\":6755,\"journal\":{\"name\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"143 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2019.8870557\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A generalized multi-particle drift-diffusion simulator for optoelectronic devices
We present a generalized multi-particle drift-diffusion model capable to overcome the limitations imposed by the classic drift-diffusion model. It was designed as flexible and reusable tool that takes into account explicitly multiple carrier populations, whether charged and neutral, allowing to consider also e.g. exciton transport or ionic motion, crucial for a relevant number of device structures.