基于RF MEMS开关的封装单极双通(SPDT)和真时间延迟线(TTDL)

G. de Angelis, A. Lucibello, R. Marcelli, S. Catoni, A. Lanciano, R. Buttiglione, M. Dispenza, F. Giacomozzi, B. Margesin, A. Maglione, M. Erspan, C. Combi
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引用次数: 12

摘要

封装的MEMS器件射频应用已经建模,实现和测试。特别是,RF MEMS单欧姆系列开关(SPST)已在硅高电阻率衬底上获得,并已集成在氧化铝封装中,以获得单极双通(SPDT)和真延时线(TTDL)配置。结果,获得了用于(6-18)GHz频段宽带工作的ttdl,预测插入损耗在14 GHz以下为2 dB,长路径为3 dB,短路径为0.3-0.4 ns,长路径为0.5-0.6 ns。最大差分延迟时间约为0.2 ns。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Packaged single pole double thru (SPDT) and true time delay lines (TTDL) based on RF MEMS switches
Packaged MEMS devices for RF applications have been modelled, realized and tested. In particular, RF MEMS single ohmic series switches (SPST) have been obtained on silicon high resistivity substrates and they have been integrated in alumina packages to get single-pole-double-thru (SPDT) and true-time-delay-line (TTDL) configurations. As a result, TTDLs for wide band operation, designed for the (6-18) GHz band, have been obtained, with predicted insertion losses less than 2 dB up to 14 GHz for the short path and 3 dB for the long path, and delay times in the order of 0.3-0.4 ns for the short path and 0.5-0.6 ns for the long path. The maximum differential delay time is in the order of 0.2 ns.
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