Song Zhitang, Ren Wei, Wu Xiaoqing, Zhang Liangying, Y. Xi
{"title":"底电极对PLT铁电薄膜结构和电性能的影响","authors":"Song Zhitang, Ren Wei, Wu Xiaoqing, Zhang Liangying, Y. Xi","doi":"10.1109/ISAF.1996.598205","DOIUrl":null,"url":null,"abstract":"Lead lanthanum titanate (PLT) thin film with 10 at.% of La and 15 at.% of excess Pb were deposited on Pt/Ti electrodes with different thickness of Ti layer by metallo-organic decomposition (MOD) process. X-ray diffraction (XRD) and scanning electron microscopy (SEM) have been applied to investigate the micro structure and morphology of the PLT thin films. The grain sizes of PLT thin films are between 0.9/spl sim/1.5 /spl mu/m. The thickness of the Ti layer has a dominant effect on the dielectric and ferroelectric properties of the PLT films. The dielectric constants of the thin films annealed at 550/spl deg/C for 1 hr are between 510/spl sim/580, the dielectric loss tangent is less than 2%. The remanent polarization is between 6.3/spl sim/7.6 /spl mu/m/cm/sup 2/ and the coercive field is about 68.9/spl sim/83.7 kV/cm at 1 kHz.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"130 1","pages":"1031-1034 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of bottom electrodes on structures and electric properties of PLT ferroelectric thin films\",\"authors\":\"Song Zhitang, Ren Wei, Wu Xiaoqing, Zhang Liangying, Y. Xi\",\"doi\":\"10.1109/ISAF.1996.598205\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Lead lanthanum titanate (PLT) thin film with 10 at.% of La and 15 at.% of excess Pb were deposited on Pt/Ti electrodes with different thickness of Ti layer by metallo-organic decomposition (MOD) process. X-ray diffraction (XRD) and scanning electron microscopy (SEM) have been applied to investigate the micro structure and morphology of the PLT thin films. The grain sizes of PLT thin films are between 0.9/spl sim/1.5 /spl mu/m. The thickness of the Ti layer has a dominant effect on the dielectric and ferroelectric properties of the PLT films. The dielectric constants of the thin films annealed at 550/spl deg/C for 1 hr are between 510/spl sim/580, the dielectric loss tangent is less than 2%. The remanent polarization is between 6.3/spl sim/7.6 /spl mu/m/cm/sup 2/ and the coercive field is about 68.9/spl sim/83.7 kV/cm at 1 kHz.\",\"PeriodicalId\":14772,\"journal\":{\"name\":\"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics\",\"volume\":\"130 1\",\"pages\":\"1031-1034 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-08-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.1996.598205\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1996.598205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of bottom electrodes on structures and electric properties of PLT ferroelectric thin films
Lead lanthanum titanate (PLT) thin film with 10 at.% of La and 15 at.% of excess Pb were deposited on Pt/Ti electrodes with different thickness of Ti layer by metallo-organic decomposition (MOD) process. X-ray diffraction (XRD) and scanning electron microscopy (SEM) have been applied to investigate the micro structure and morphology of the PLT thin films. The grain sizes of PLT thin films are between 0.9/spl sim/1.5 /spl mu/m. The thickness of the Ti layer has a dominant effect on the dielectric and ferroelectric properties of the PLT films. The dielectric constants of the thin films annealed at 550/spl deg/C for 1 hr are between 510/spl sim/580, the dielectric loss tangent is less than 2%. The remanent polarization is between 6.3/spl sim/7.6 /spl mu/m/cm/sup 2/ and the coercive field is about 68.9/spl sim/83.7 kV/cm at 1 kHz.