底电极对PLT铁电薄膜结构和电性能的影响

Song Zhitang, Ren Wei, Wu Xiaoqing, Zhang Liangying, Y. Xi
{"title":"底电极对PLT铁电薄膜结构和电性能的影响","authors":"Song Zhitang, Ren Wei, Wu Xiaoqing, Zhang Liangying, Y. Xi","doi":"10.1109/ISAF.1996.598205","DOIUrl":null,"url":null,"abstract":"Lead lanthanum titanate (PLT) thin film with 10 at.% of La and 15 at.% of excess Pb were deposited on Pt/Ti electrodes with different thickness of Ti layer by metallo-organic decomposition (MOD) process. X-ray diffraction (XRD) and scanning electron microscopy (SEM) have been applied to investigate the micro structure and morphology of the PLT thin films. The grain sizes of PLT thin films are between 0.9/spl sim/1.5 /spl mu/m. The thickness of the Ti layer has a dominant effect on the dielectric and ferroelectric properties of the PLT films. The dielectric constants of the thin films annealed at 550/spl deg/C for 1 hr are between 510/spl sim/580, the dielectric loss tangent is less than 2%. The remanent polarization is between 6.3/spl sim/7.6 /spl mu/m/cm/sup 2/ and the coercive field is about 68.9/spl sim/83.7 kV/cm at 1 kHz.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"130 1","pages":"1031-1034 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of bottom electrodes on structures and electric properties of PLT ferroelectric thin films\",\"authors\":\"Song Zhitang, Ren Wei, Wu Xiaoqing, Zhang Liangying, Y. Xi\",\"doi\":\"10.1109/ISAF.1996.598205\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Lead lanthanum titanate (PLT) thin film with 10 at.% of La and 15 at.% of excess Pb were deposited on Pt/Ti electrodes with different thickness of Ti layer by metallo-organic decomposition (MOD) process. X-ray diffraction (XRD) and scanning electron microscopy (SEM) have been applied to investigate the micro structure and morphology of the PLT thin films. The grain sizes of PLT thin films are between 0.9/spl sim/1.5 /spl mu/m. The thickness of the Ti layer has a dominant effect on the dielectric and ferroelectric properties of the PLT films. The dielectric constants of the thin films annealed at 550/spl deg/C for 1 hr are between 510/spl sim/580, the dielectric loss tangent is less than 2%. The remanent polarization is between 6.3/spl sim/7.6 /spl mu/m/cm/sup 2/ and the coercive field is about 68.9/spl sim/83.7 kV/cm at 1 kHz.\",\"PeriodicalId\":14772,\"journal\":{\"name\":\"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics\",\"volume\":\"130 1\",\"pages\":\"1031-1034 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-08-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.1996.598205\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1996.598205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

钛酸镧铅(PLT)薄膜。%的La和15%的at。采用金属有机分解法(MOD)在不同Ti层厚度的Pt/Ti电极上沉积了%的过量Pb。利用x射线衍射(XRD)和扫描电子显微镜(SEM)研究了PLT薄膜的微观结构和形貌。PLT薄膜晶粒尺寸在0.9/spl sim/1.5 /spl mu/m之间。Ti层的厚度对PLT薄膜的介电性能和铁电性能有主要影响。在550/spl℃下退火1 h后,薄膜的介电常数在510/spl sim/580之间,介电损耗正切值小于2%。剩余极化在6.3/spl sim/7.6 /spl mu/m/cm/sup 2/之间,1 kHz时的矫顽力场约为68.9/spl sim/83.7 kV/cm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of bottom electrodes on structures and electric properties of PLT ferroelectric thin films
Lead lanthanum titanate (PLT) thin film with 10 at.% of La and 15 at.% of excess Pb were deposited on Pt/Ti electrodes with different thickness of Ti layer by metallo-organic decomposition (MOD) process. X-ray diffraction (XRD) and scanning electron microscopy (SEM) have been applied to investigate the micro structure and morphology of the PLT thin films. The grain sizes of PLT thin films are between 0.9/spl sim/1.5 /spl mu/m. The thickness of the Ti layer has a dominant effect on the dielectric and ferroelectric properties of the PLT films. The dielectric constants of the thin films annealed at 550/spl deg/C for 1 hr are between 510/spl sim/580, the dielectric loss tangent is less than 2%. The remanent polarization is between 6.3/spl sim/7.6 /spl mu/m/cm/sup 2/ and the coercive field is about 68.9/spl sim/83.7 kV/cm at 1 kHz.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信