绝缘体上硅衬底单结晶体管

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI:10.1109/ICSICT49897.2020.9278352

Yx Chen, J. Liu, K. Xiao, A. Zaslavsky, S. Cristoloveanu, F. Liu, BH. Li, B. Li, J. Wan

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引用次数: 0

摘要

提出了一种基于全耗尽绝缘体上硅衬底的单结晶体管。器件结构类似于结型场效应晶体管。通过TCAD仿真，我们观察到在导通电压由第二基极电压线性控制的情况下，发射极电流-发射极电压曲线出现了剧烈的开关和大的滞后。器件的工作主要由发射-沟道PN结决定，该PN结由后门电压感应产生。通过通道电位的变化分析了后门电压对电特性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Unijunction Transistor on Silicon-On-Insulator Substrate

A unijunction transistor based on fully-depleted silicon-on-insulator substrate is proposed. The device structure is similar to a junction field effect transistor. By conducting the TCAD simulation, we observe sharp switching and large hysteresis in emitter current-emitter voltage curves with the turn-on voltage linearly controlled by the second base voltage. The operation of the device is mainly determined by the emitter-channel PN junction, which is induced by the backgate voltage. The impact of the backgate voltage on the electrical characteristics is analyzed by changes in the channel potential.

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2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

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