AlInP窗层亚波长结构的高效InGaP/GaAs太阳能电池

2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI:10.1109/INEC.2010.5424479

M. Tsai, P. Yu, C. Chiu, H. Kuo, T. Lu

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引用次数: 1

摘要

在本研究中，采用亚波长表面织构工艺制备了InGaP/GaAs太阳能电池。研究了具有和不具有亚波长表面纹理的InGaP/GaAs太阳能电池的特性。在室温下，在一个太阳空气质量1.5全局照度下测量的转换效率也可以从10.8%提高。利用RCWA对亚波长结构的模拟结果表明，亚波长表面纹理会增加太阳能电池的吸收率。

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High efficiency InGaP/GaAs solar cell with Sub-wavelength structure on AlInP window layer

In this study, InGaP/GaAs solar cells fabricated by a Sub-wavelength surface texture process are presented. The characteristics of the InGaP/GaAs solar cells with and without the Sub-wavelength surface texture are studied. The conversion efficiency measured under one-sun air mass 1.5 global illumination at room temperature can also be improved from 10.8%. The simulated result of the Sub-wavelength structure by the RCWA was demonstrated that absorption of the solar cell will increase by the Sub-wavelength surface texture.

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2010 3rd International Nanoelectronics Conference (INEC)

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