石墨烯接触MoS2 fet的接触界面表征

V. Mootheri, A. Minj, G. Arutchelvan, A. Leonhardt, I. Asselberghs, M. Heyns, I. Radu, D. Lin
{"title":"石墨烯接触MoS2 fet的接触界面表征","authors":"V. Mootheri, A. Minj, G. Arutchelvan, A. Leonhardt, I. Asselberghs, M. Heyns, I. Radu, D. Lin","doi":"10.1109/IITC51362.2021.9537337","DOIUrl":null,"url":null,"abstract":"Graphene based 2D electrical contacts have been proposed to mitigate the contact resistance bottleneck in 2D material based transistors. In this work, we present a detailed analysis of Ru-graphene and Ni-graphene contacts to 2.1nm thick CVD MoS2, which show a contact resistance of 9.34 kΩ – μm and 17.1 kΩ – μm, respectively. We report a novel physical characterization strategy to characterize the MoS2-contact interface by inverting the MoS2 devices, exposing the contact interface. Using Raman spectroscopy and X-ray photoelectron spectroscopy, we characterize the contact interface to correlate the observed electrical trend with physical characterization of the contact interface.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Contact Interface Characterization of Graphene contacted MoS2 FETs\",\"authors\":\"V. Mootheri, A. Minj, G. Arutchelvan, A. Leonhardt, I. Asselberghs, M. Heyns, I. Radu, D. Lin\",\"doi\":\"10.1109/IITC51362.2021.9537337\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Graphene based 2D electrical contacts have been proposed to mitigate the contact resistance bottleneck in 2D material based transistors. In this work, we present a detailed analysis of Ru-graphene and Ni-graphene contacts to 2.1nm thick CVD MoS2, which show a contact resistance of 9.34 kΩ – μm and 17.1 kΩ – μm, respectively. We report a novel physical characterization strategy to characterize the MoS2-contact interface by inverting the MoS2 devices, exposing the contact interface. Using Raman spectroscopy and X-ray photoelectron spectroscopy, we characterize the contact interface to correlate the observed electrical trend with physical characterization of the contact interface.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC51362.2021.9537337\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537337","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

基于石墨烯的二维电触点已被提出,以缓解基于二维材料的晶体管的接触电阻瓶颈。在这项工作中,我们详细分析了2.1nm厚CVD MoS2的ru -石墨烯和ni -石墨烯接触,其接触电阻分别为9.34 kΩ - μm和17.1 kΩ - μm。我们报告了一种新的物理表征策略,通过反转MoS2器件,暴露接触界面来表征MoS2接触界面。利用拉曼光谱和x射线光电子能谱对接触界面进行表征,将观察到的电趋势与接触界面的物理特征联系起来。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Contact Interface Characterization of Graphene contacted MoS2 FETs
Graphene based 2D electrical contacts have been proposed to mitigate the contact resistance bottleneck in 2D material based transistors. In this work, we present a detailed analysis of Ru-graphene and Ni-graphene contacts to 2.1nm thick CVD MoS2, which show a contact resistance of 9.34 kΩ – μm and 17.1 kΩ – μm, respectively. We report a novel physical characterization strategy to characterize the MoS2-contact interface by inverting the MoS2 devices, exposing the contact interface. Using Raman spectroscopy and X-ray photoelectron spectroscopy, we characterize the contact interface to correlate the observed electrical trend with physical characterization of the contact interface.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信