石墨烯接触MoS2 fet的接触界面表征

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2021-07-06 DOI:10.1109/IITC51362.2021.9537337

V. Mootheri, A. Minj, G. Arutchelvan, A. Leonhardt, I. Asselberghs, M. Heyns, I. Radu, D. Lin

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引用次数: 0

摘要

基于石墨烯的二维电触点已被提出，以缓解基于二维材料的晶体管的接触电阻瓶颈。在这项工作中，我们详细分析了2.1nm厚CVD MoS2的ru -石墨烯和ni -石墨烯接触，其接触电阻分别为9.34 kΩ - μm和17.1 kΩ - μm。我们报告了一种新的物理表征策略，通过反转MoS2器件，暴露接触界面来表征MoS2接触界面。利用拉曼光谱和x射线光电子能谱对接触界面进行表征，将观察到的电趋势与接触界面的物理特征联系起来。

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Contact Interface Characterization of Graphene contacted MoS2 FETs

Graphene based 2D electrical contacts have been proposed to mitigate the contact resistance bottleneck in 2D material based transistors. In this work, we present a detailed analysis of Ru-graphene and Ni-graphene contacts to 2.1nm thick CVD MoS2, which show a contact resistance of 9.34 kΩ – μm and 17.1 kΩ – μm, respectively. We report a novel physical characterization strategy to characterize the MoS2-contact interface by inverting the MoS2 devices, exposing the contact interface. Using Raman spectroscopy and X-ray photoelectron spectroscopy, we characterize the contact interface to correlate the observed electrical trend with physical characterization of the contact interface.

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2021 IEEE International Interconnect Technology Conference (IITC)

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