III-V型mosfet的1/f和Lorenzian噪声建模

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870548

E. Caruso, F. Bettetti, L. D. Linz, D. Pin, M. Segatto, P. Palestri

{"title":"III-V型mosfet的1/f和Lorenzian噪声建模","authors":"E. Caruso, F. Bettetti, L. D. Linz, D. Pin, M. Segatto, P. Palestri","doi":"10.1109/SISPAD.2019.8870548","DOIUrl":null,"url":null,"abstract":"We present an approach to model 1/f and random telegraph noise in TCAD combining the models for non-local tunneling to traps and generation/recombination noise. The TCAD results are compared with simple numerical expression to understand the influence of the device and trap parameters on the noise spectrum. The simulation deck is then used to compute the low-frequency noise spectrum in III-V MOSFETs using traps distributions extracted from multi-frequency C-V measurements.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"88 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Modeling 1/f and Lorenzian noise in III-V MOSFETs\",\"authors\":\"E. Caruso, F. Bettetti, L. D. Linz, D. Pin, M. Segatto, P. Palestri\",\"doi\":\"10.1109/SISPAD.2019.8870548\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present an approach to model 1/f and random telegraph noise in TCAD combining the models for non-local tunneling to traps and generation/recombination noise. The TCAD results are compared with simple numerical expression to understand the influence of the device and trap parameters on the noise spectrum. The simulation deck is then used to compute the low-frequency noise spectrum in III-V MOSFETs using traps distributions extracted from multi-frequency C-V measurements.\",\"PeriodicalId\":6755,\"journal\":{\"name\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"88 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2019.8870548\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870548","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

我们提出了一种结合非局部隧道陷阱和产生/重组噪声模型的TCAD模型1/f和随机电报噪声的方法。将TCAD结果与简单的数值表达式进行比较，了解器件和陷阱参数对噪声谱的影响。然后使用仿真平台计算III-V mosfet中的低频噪声频谱，使用从多频C-V测量中提取的陷阱分布。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Modeling 1/f and Lorenzian noise in III-V MOSFETs

We present an approach to model 1/f and random telegraph noise in TCAD combining the models for non-local tunneling to traps and generation/recombination noise. The TCAD results are compared with simple numerical expression to understand the influence of the device and trap parameters on the noise spectrum. The simulation deck is then used to compute the low-frequency noise spectrum in III-V MOSFETs using traps distributions extracted from multi-frequency C-V measurements.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

自引率

0.00%

发文量