基极电流在SiGe HBT中由发射极中的SiGe调谐

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979658

H.G.A. Huizing, J. Klootwijk, E. Aksen, J. Slotboom

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引用次数: 8

摘要

npn型SiGe异质结双极晶体管(HBT’s)具有高截止频率，但由于其高电流增益而具有低击穿电压。我们表明，在发射极中的SiGe层可以增加基极电流，从而增加击穿电压，而集电极电流和截止频率不会降低。模拟和初步实验结果清楚地证实了这一效应。

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Base current tuning in SiGe HBT's by SiGe in the emitter

Npn-type SiGe heterojunction bipolar transistors (HBT's) have high cut-off frequencies, but low breakdown voltages due to their high current gain. We show that a SiGe layer in the emitter can increase the base current and hence the breakdown voltage while the collector current and cut-off frequency are not reduced. Simulations and first experimental results clearly confirm this effect.

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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