Youngkyu Song, Chulhyun Park, J. Kang, I. Sohn, Y. Noh, Jongmin Lee, Eungjang Lee, Seung-Han Park, Soogil Lee, Jongill Hong, I. Yun
{"title":"激光钻穿硅衬底对MOSFET器件特性的影响","authors":"Youngkyu Song, Chulhyun Park, J. Kang, I. Sohn, Y. Noh, Jongmin Lee, Eungjang Lee, Seung-Han Park, Soogil Lee, Jongill Hong, I. Yun","doi":"10.1109/INEC.2010.5424968","DOIUrl":null,"url":null,"abstract":"The effects of laser drilling through silicon substrate formed by femtosecond laser on n-type MOSFET device characteristics are investigated. The tested MOSFET device structures are fabricated using the commercial 130-nm process. Through via holes and laser scanning line affect the device characteristics, such as drain current and threshold voltage, depending on the distance between the location of the drilling. The device degradation and variation along with a distance from the holes or the line are examined and the device characteristic variation is analyzed to determine the reliability of MOSFET devices against laser drilling damage.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"19 1","pages":"1167-1168"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of laser drilling through silicon substrate on MOSFET device characteristics\",\"authors\":\"Youngkyu Song, Chulhyun Park, J. Kang, I. Sohn, Y. Noh, Jongmin Lee, Eungjang Lee, Seung-Han Park, Soogil Lee, Jongill Hong, I. Yun\",\"doi\":\"10.1109/INEC.2010.5424968\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of laser drilling through silicon substrate formed by femtosecond laser on n-type MOSFET device characteristics are investigated. The tested MOSFET device structures are fabricated using the commercial 130-nm process. Through via holes and laser scanning line affect the device characteristics, such as drain current and threshold voltage, depending on the distance between the location of the drilling. The device degradation and variation along with a distance from the holes or the line are examined and the device characteristic variation is analyzed to determine the reliability of MOSFET devices against laser drilling damage.\",\"PeriodicalId\":6390,\"journal\":{\"name\":\"2010 3rd International Nanoelectronics Conference (INEC)\",\"volume\":\"19 1\",\"pages\":\"1167-1168\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 3rd International Nanoelectronics Conference (INEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INEC.2010.5424968\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 3rd International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2010.5424968","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of laser drilling through silicon substrate on MOSFET device characteristics
The effects of laser drilling through silicon substrate formed by femtosecond laser on n-type MOSFET device characteristics are investigated. The tested MOSFET device structures are fabricated using the commercial 130-nm process. Through via holes and laser scanning line affect the device characteristics, such as drain current and threshold voltage, depending on the distance between the location of the drilling. The device degradation and variation along with a distance from the holes or the line are examined and the device characteristic variation is analyzed to determine the reliability of MOSFET devices against laser drilling damage.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
