基于AlGaN/GaN肖特基二极管的120GHz倍频器设计

2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) Pub Date : 2021-08-29 DOI:10.1109/IRMMW-THz50926.2021.9567587

Jin Meng, Haotian Zhu, Dehai Zhang, Hao Li, Yuh-Jing Li, Siyu Liu

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引用次数: 0

摘要

与砷化镓材料相比，氮化镓器件具有更好的功率耐久特性，在大功率电源领域具有很大的发展潜力。本文提出了GaN肖特基二极管的异质结结构，提高了器件的电子迁移率，截止频率在250 GHz以上。在此基础上设计了120 GHz倍频器。仿真结果表明，当输入功率为1w时，转换效率可达15%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of a 120GHz Doubler based on AlGaN/GaN Schottky diode

Compared with Gallium Arsenide material, GaN device has better power endurance characteristics, and hence has great potential in the development of high power source. This paper proposes a heterojunction structure of GaN Schottky diode to improve the electron mobility of the device, and the cut-off frequency is over 250 GHz. Furthermore, a 120 GHz doubler is designed based on the proposed device. The simulated result shows that the conversion efficiency reaches 15% when the input power is 1 W.

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2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)

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