F. Inoue, T. Shimizu, H. Miyake, R. Arima, S. Shingubara
{"title":"采用化学钴合金屏障和Cu种子的全湿式TSV充铜工艺","authors":"F. Inoue, T. Shimizu, H. Miyake, R. Arima, S. Shingubara","doi":"10.1109/ECTC.2012.6248926","DOIUrl":null,"url":null,"abstract":"We demonstrated fabrication of Cu-TSV using all-wet process, which has a high potential to apply for the via-last Cu-TSV process. A Co-W alloy diffusion barrier layer was formed on SiO2 layer by electroless plating at 60 °C with Pd nanoparticle catalyst. The barrier layer was thin and continuous throughout a 2 φ × 24 μm TSV and its adhesion strength on SiO2 was as high as that of PVD-Ta. The Co-W alloy layer has undergone an interdiffusion test, which showed a high resistance against Cu diffusion into SiO2 layer. Then, seed layer was formed by electroless Cu deposition on the Co-W alloy layer through displacement reaction. These results reveal a feasibility of all-wet fabrication in a high aspect ratio TSV process.","PeriodicalId":6384,"journal":{"name":"2012 IEEE 62nd Electronic Components and Technology Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"All-wet Cu-filled TSV process using electroless Co-alloy barrier and Cu seed\",\"authors\":\"F. Inoue, T. Shimizu, H. Miyake, R. Arima, S. Shingubara\",\"doi\":\"10.1109/ECTC.2012.6248926\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrated fabrication of Cu-TSV using all-wet process, which has a high potential to apply for the via-last Cu-TSV process. A Co-W alloy diffusion barrier layer was formed on SiO2 layer by electroless plating at 60 °C with Pd nanoparticle catalyst. The barrier layer was thin and continuous throughout a 2 φ × 24 μm TSV and its adhesion strength on SiO2 was as high as that of PVD-Ta. The Co-W alloy layer has undergone an interdiffusion test, which showed a high resistance against Cu diffusion into SiO2 layer. Then, seed layer was formed by electroless Cu deposition on the Co-W alloy layer through displacement reaction. These results reveal a feasibility of all-wet fabrication in a high aspect ratio TSV process.\",\"PeriodicalId\":6384,\"journal\":{\"name\":\"2012 IEEE 62nd Electronic Components and Technology Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-07-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 62nd Electronic Components and Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.2012.6248926\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 62nd Electronic Components and Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2012.6248926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
All-wet Cu-filled TSV process using electroless Co-alloy barrier and Cu seed
We demonstrated fabrication of Cu-TSV using all-wet process, which has a high potential to apply for the via-last Cu-TSV process. A Co-W alloy diffusion barrier layer was formed on SiO2 layer by electroless plating at 60 °C with Pd nanoparticle catalyst. The barrier layer was thin and continuous throughout a 2 φ × 24 μm TSV and its adhesion strength on SiO2 was as high as that of PVD-Ta. The Co-W alloy layer has undergone an interdiffusion test, which showed a high resistance against Cu diffusion into SiO2 layer. Then, seed layer was formed by electroless Cu deposition on the Co-W alloy layer through displacement reaction. These results reveal a feasibility of all-wet fabrication in a high aspect ratio TSV process.