功能氮化硼的电子结构与热性能

Jing Cao, Tzee Luai Meng, Xikui Zhang, Chee Kiang Ivan Tan, Ady Suwardi, Hongfei Liu
{"title":"功能氮化硼的电子结构与热性能","authors":"Jing Cao,&nbsp;Tzee Luai Meng,&nbsp;Xikui Zhang,&nbsp;Chee Kiang Ivan Tan,&nbsp;Ady Suwardi,&nbsp;Hongfei Liu","doi":"10.1016/j.mtelec.2022.100005","DOIUrl":null,"url":null,"abstract":"<div><p>The past two decades have witnessed extensive explorations of boron nitride (BN) largely due to its unique optoelectronic properties, mechanical robustness, high thermal conductivity, thermal and chemical stability. Crystal growth and functional engineering of BN thin film structures as well as their integrations with two-dimensional materials for advanced applications have been attracting increasing interest in recent years. Here, we have reviewed the basic structural, electronic, and thermal transport properties of BN, especially hexagonal BN both in bulk and reduced dimensionalities. This is followed by a thorough account of progress in atomic layer deposition (ALD) of BN, which has the advantages of being able to grow on 3D surface and control the film thickness in atomic level. Future perspectives are provided through discussing the potential applications of BN along with the material synthesis.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949422000055/pdfft?md5=44150117c54555a019285c8c182c94d2&pid=1-s2.0-S2772949422000055-main.pdf","citationCount":"6","resultStr":"{\"title\":\"On functional boron nitride: Electronic structures and thermal properties\",\"authors\":\"Jing Cao,&nbsp;Tzee Luai Meng,&nbsp;Xikui Zhang,&nbsp;Chee Kiang Ivan Tan,&nbsp;Ady Suwardi,&nbsp;Hongfei Liu\",\"doi\":\"10.1016/j.mtelec.2022.100005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The past two decades have witnessed extensive explorations of boron nitride (BN) largely due to its unique optoelectronic properties, mechanical robustness, high thermal conductivity, thermal and chemical stability. Crystal growth and functional engineering of BN thin film structures as well as their integrations with two-dimensional materials for advanced applications have been attracting increasing interest in recent years. Here, we have reviewed the basic structural, electronic, and thermal transport properties of BN, especially hexagonal BN both in bulk and reduced dimensionalities. This is followed by a thorough account of progress in atomic layer deposition (ALD) of BN, which has the advantages of being able to grow on 3D surface and control the film thickness in atomic level. Future perspectives are provided through discussing the potential applications of BN along with the material synthesis.</p></div>\",\"PeriodicalId\":100893,\"journal\":{\"name\":\"Materials Today Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S2772949422000055/pdfft?md5=44150117c54555a019285c8c182c94d2&pid=1-s2.0-S2772949422000055-main.pdf\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Today Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2772949422000055\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Electronics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2772949422000055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

在过去的二十年里,氮化硼(BN)因其独特的光电性能、机械坚固性、高导热性、热稳定性和化学稳定性而得到了广泛的探索。近年来,氮化硼薄膜结构的晶体生长和功能工程及其与二维材料的集成在高级应用中越来越引起人们的兴趣。在这里,我们回顾了BN的基本结构、电子和热输运性质,特别是六方体和降维BN。随后,全面介绍了BN的原子层沉积(ALD)的进展,其优点是能够在3D表面上生长并在原子水平上控制膜厚度。通过讨论氮化硼在材料合成中的潜在应用,提供了未来的前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

On functional boron nitride: Electronic structures and thermal properties

On functional boron nitride: Electronic structures and thermal properties

The past two decades have witnessed extensive explorations of boron nitride (BN) largely due to its unique optoelectronic properties, mechanical robustness, high thermal conductivity, thermal and chemical stability. Crystal growth and functional engineering of BN thin film structures as well as their integrations with two-dimensional materials for advanced applications have been attracting increasing interest in recent years. Here, we have reviewed the basic structural, electronic, and thermal transport properties of BN, especially hexagonal BN both in bulk and reduced dimensionalities. This is followed by a thorough account of progress in atomic layer deposition (ALD) of BN, which has the advantages of being able to grow on 3D surface and control the film thickness in atomic level. Future perspectives are provided through discussing the potential applications of BN along with the material synthesis.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
2.10
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信