液相脉冲CVD设计和运行中液滴蒸发的数值模拟

Raphaël Boichot, Susan Krumdieck
{"title":"液相脉冲CVD设计和运行中液滴蒸发的数值模拟","authors":"Raphaël Boichot,&nbsp;Susan Krumdieck","doi":"10.1002/cvde.201571015","DOIUrl":null,"url":null,"abstract":"<p><i>Chem. Vap. Deposition</i>, <b>2015</b>, <i>21</i>, 375.</p><p>DOI: 10.1002/cvde.201507191</p><p>The original article presented the modeling for non-steady evaporation processes of liquid solution droplets injected into a pumped-down low-pressure vessel having a specified wall temperature. Numerical simulations were carried out for one of the few precursors with sufficient physical property data, TTIP. The authors compared the droplet evaporation processes for two possible solvents, toluene and hexane. Unfortunately, a discrepancy in the unit systems of the property references (molar units vs mass units) was not detected during the modeling used in this paper. We present here the correct property values, the corrected figures and updated discussion. The sensitivity analysis and stages of the vaporization process elicited in the simulations are not affected by this error. Updated Figures 5, 6, 7, 8 and 9 showing corrected droplet evaporation times for a process, normalized to 10 s cycles, are given here.</p><p>The correct enthalpy of vaporization for TTIP is Δ<i>H</i><sub>vap</sub> = 219.2 kJ kg<sup>−1</sup> (instead of 62.3 kJ kg<sup>−1</sup>) and for toluene Δ<i>H</i><sub>vap</sub> = 401.6 kJ kg<sup>−1</sup> (instead of 38.1 kJ kg<sup>−1</sup>). In consequence, the vaporization times for TTIP and toluene mixtures were underestimated. The vaporization time of a mixture of TTIP and hexane is 3.81 s (instead of 2.35 s). The vaporization time of a mixture of TTIP and toluene is 4.68 s (instead of 1.89 s).</p><p>The main consequence of the unit error is the discussion in Section 3.2 where we use the model results to consider the choice of solvent. In MOCVD it is sometimes possible to choose between chemically compatible solvents for a given precursor. The main motivation for this study was to understand how the physical properties of vapor pressure, specific heat and enthalpy of vaporization might influence the precursor vaporization. We have many years of experience with toluene, but have not yet tried hexane as a vaporization solvent for TTIP. There is no reported experimental comparison in the literature. Hexane has six times higher vapor pressure than toluene, so one might conclude that hexane would be a vastly superior choice. However in our recently reported preliminary study of pp-MOCVD alumina deposition using different precursors and solvents, we did not get markedly different results due to solvent alone.<span>1</span> The erroneous shorter drop life for toluene seemed to possibly fit with one aspect of our previous results, but this could definitely be due to one of many other factors like solvent and precursor chemistry and variability of working conditions.</p><p>The model shows how vaporization kinetics are mainly controlled by enthalpy of vaporization, not vapor pressure. Toluene and hexane have similar enthalpy of vaporization. This aspect of the mathematical description of the problem, the study with pure hexane, the sensitivity analysis and the rules of optimization for pressure-pulsed CVD process do not suffer any inaccuracy, according to our simplifying assumptions. We confirm that a solvent and precursor with high vapor pressure and low enthalpy of vaporization should be chosen and that the main processing parameter to control is the reactor wall temperature, which provides heat for phase change and shortens droplet life. We plan to carry out experimental work in the near future with TTIP using different solvents and with different reactor wall temperature to study the effects on vaporization efficiency and thus growth rate.</p><p>The authors apologize for any inconvenience caused by these errors.</p>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"21 10-11-12","pages":"385-386"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201571015","citationCount":"2","resultStr":"{\"title\":\"Numerical Modeling of the Droplet Vaporization for Design and Operation of Liquid-pulsed CVD\",\"authors\":\"Raphaël Boichot,&nbsp;Susan Krumdieck\",\"doi\":\"10.1002/cvde.201571015\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><i>Chem. Vap. Deposition</i>, <b>2015</b>, <i>21</i>, 375.</p><p>DOI: 10.1002/cvde.201507191</p><p>The original article presented the modeling for non-steady evaporation processes of liquid solution droplets injected into a pumped-down low-pressure vessel having a specified wall temperature. Numerical simulations were carried out for one of the few precursors with sufficient physical property data, TTIP. The authors compared the droplet evaporation processes for two possible solvents, toluene and hexane. Unfortunately, a discrepancy in the unit systems of the property references (molar units vs mass units) was not detected during the modeling used in this paper. We present here the correct property values, the corrected figures and updated discussion. The sensitivity analysis and stages of the vaporization process elicited in the simulations are not affected by this error. Updated Figures 5, 6, 7, 8 and 9 showing corrected droplet evaporation times for a process, normalized to 10 s cycles, are given here.</p><p>The correct enthalpy of vaporization for TTIP is Δ<i>H</i><sub>vap</sub> = 219.2 kJ kg<sup>−1</sup> (instead of 62.3 kJ kg<sup>−1</sup>) and for toluene Δ<i>H</i><sub>vap</sub> = 401.6 kJ kg<sup>−1</sup> (instead of 38.1 kJ kg<sup>−1</sup>). In consequence, the vaporization times for TTIP and toluene mixtures were underestimated. The vaporization time of a mixture of TTIP and hexane is 3.81 s (instead of 2.35 s). The vaporization time of a mixture of TTIP and toluene is 4.68 s (instead of 1.89 s).</p><p>The main consequence of the unit error is the discussion in Section 3.2 where we use the model results to consider the choice of solvent. In MOCVD it is sometimes possible to choose between chemically compatible solvents for a given precursor. The main motivation for this study was to understand how the physical properties of vapor pressure, specific heat and enthalpy of vaporization might influence the precursor vaporization. We have many years of experience with toluene, but have not yet tried hexane as a vaporization solvent for TTIP. There is no reported experimental comparison in the literature. Hexane has six times higher vapor pressure than toluene, so one might conclude that hexane would be a vastly superior choice. However in our recently reported preliminary study of pp-MOCVD alumina deposition using different precursors and solvents, we did not get markedly different results due to solvent alone.<span>1</span> The erroneous shorter drop life for toluene seemed to possibly fit with one aspect of our previous results, but this could definitely be due to one of many other factors like solvent and precursor chemistry and variability of working conditions.</p><p>The model shows how vaporization kinetics are mainly controlled by enthalpy of vaporization, not vapor pressure. Toluene and hexane have similar enthalpy of vaporization. This aspect of the mathematical description of the problem, the study with pure hexane, the sensitivity analysis and the rules of optimization for pressure-pulsed CVD process do not suffer any inaccuracy, according to our simplifying assumptions. We confirm that a solvent and precursor with high vapor pressure and low enthalpy of vaporization should be chosen and that the main processing parameter to control is the reactor wall temperature, which provides heat for phase change and shortens droplet life. We plan to carry out experimental work in the near future with TTIP using different solvents and with different reactor wall temperature to study the effects on vaporization efficiency and thus growth rate.</p><p>The authors apologize for any inconvenience caused by these errors.</p>\",\"PeriodicalId\":10093,\"journal\":{\"name\":\"Chemical Vapor Deposition\",\"volume\":\"21 10-11-12\",\"pages\":\"385-386\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1002/cvde.201571015\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chemical Vapor Deposition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201571015\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Vapor Deposition","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201571015","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

化学。Vap。Deposition,2015,21375。OI:10.1002/vde.201507191原始文章介绍了注入具有特定壁温的泵送低压容器中的液体溶液液滴的非稳态蒸发过程的建模。对具有足够物理性质数据的少数前驱体之一TTIP进行了数值模拟。作者比较了甲苯和己烷这两种可能的溶剂的液滴蒸发过程。不幸的是,在本文使用的建模过程中,没有检测到性质参考的单位系统(摩尔单位与质量单位)存在差异。我们在这里提供了正确的财产价值、正确的数字和最新的讨论。模拟中得出的蒸发过程的灵敏度分析和阶段不受该误差的影响。更新的图5、6、7、8和9显示了一个过程的修正液滴蒸发时间,标准化为10 s循环,在这里给出。TTIP的正确蒸发焓为ΔHvap = 219.2 kJ kg−1(而不是62.3 kJ kg−1)和甲苯ΔHvap = 401.6 kJ kg−1(而不是38.1 kJ kg−1)。因此,TTIP和甲苯混合物的蒸发时间被低估了。TTIP和己烷的混合物的蒸发时间为3.81 s(而不是2.35 s) 。TTIP和甲苯的混合物的蒸发时间为4.68 s(而不是1.89 s) 单位误差的主要后果是第3.2节中的讨论,其中我们使用模型结果来考虑溶剂的选择。在MOCVD中,有时可以在给定前体的化学相容溶剂之间进行选择。本研究的主要动机是了解蒸汽压、比热和蒸发焓的物理性质如何影响前驱体的蒸发。我们在甲苯方面有多年的经验,但尚未尝试将己烷作为TTIP的蒸发溶剂。文献中没有实验比较的报道。己烷的蒸汽压是甲苯的六倍,因此可以得出结论,己烷将是一个非常优越的选择。然而,在我们最近报道的使用不同前体和溶剂沉积pp-MOCVD氧化铝的初步研究中,我们并没有因为单独的溶剂而得到明显不同的结果。1甲苯的错误的较短滴寿命似乎与我们之前的结果的一个方面相吻合,但这肯定是由于许多其他因素之一,如溶剂和前体化学以及工作条件的可变性。该模型显示了蒸发动力学主要由蒸发焓控制,而不是由蒸气压控制。甲苯和己烷具有相似的蒸发焓。根据我们的简化假设,该问题的数学描述、纯己烷的研究、灵敏度分析和压力脉冲CVD工艺的优化规则的这一方面没有任何不准确之处。我们确认,应该选择具有高蒸气压和低蒸发焓的溶剂和前体,并且要控制的主要工艺参数是反应器壁温度,该温度为相变提供热量并缩短液滴寿命。我们计划在不久的将来使用不同的溶剂和不同的反应器壁温度进行TTIP的实验工作,以研究对蒸发效率和生长速率的影响。对于这些错误给您带来的不便,作者深表歉意。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Numerical Modeling of the Droplet Vaporization for Design and Operation of Liquid-pulsed CVD

Numerical Modeling of the Droplet Vaporization for Design and Operation of Liquid-pulsed CVD

Chem. Vap. Deposition, 2015, 21, 375.

DOI: 10.1002/cvde.201507191

The original article presented the modeling for non-steady evaporation processes of liquid solution droplets injected into a pumped-down low-pressure vessel having a specified wall temperature. Numerical simulations were carried out for one of the few precursors with sufficient physical property data, TTIP. The authors compared the droplet evaporation processes for two possible solvents, toluene and hexane. Unfortunately, a discrepancy in the unit systems of the property references (molar units vs mass units) was not detected during the modeling used in this paper. We present here the correct property values, the corrected figures and updated discussion. The sensitivity analysis and stages of the vaporization process elicited in the simulations are not affected by this error. Updated Figures 5, 6, 7, 8 and 9 showing corrected droplet evaporation times for a process, normalized to 10 s cycles, are given here.

The correct enthalpy of vaporization for TTIP is ΔHvap = 219.2 kJ kg−1 (instead of 62.3 kJ kg−1) and for toluene ΔHvap = 401.6 kJ kg−1 (instead of 38.1 kJ kg−1). In consequence, the vaporization times for TTIP and toluene mixtures were underestimated. The vaporization time of a mixture of TTIP and hexane is 3.81 s (instead of 2.35 s). The vaporization time of a mixture of TTIP and toluene is 4.68 s (instead of 1.89 s).

The main consequence of the unit error is the discussion in Section 3.2 where we use the model results to consider the choice of solvent. In MOCVD it is sometimes possible to choose between chemically compatible solvents for a given precursor. The main motivation for this study was to understand how the physical properties of vapor pressure, specific heat and enthalpy of vaporization might influence the precursor vaporization. We have many years of experience with toluene, but have not yet tried hexane as a vaporization solvent for TTIP. There is no reported experimental comparison in the literature. Hexane has six times higher vapor pressure than toluene, so one might conclude that hexane would be a vastly superior choice. However in our recently reported preliminary study of pp-MOCVD alumina deposition using different precursors and solvents, we did not get markedly different results due to solvent alone.1 The erroneous shorter drop life for toluene seemed to possibly fit with one aspect of our previous results, but this could definitely be due to one of many other factors like solvent and precursor chemistry and variability of working conditions.

The model shows how vaporization kinetics are mainly controlled by enthalpy of vaporization, not vapor pressure. Toluene and hexane have similar enthalpy of vaporization. This aspect of the mathematical description of the problem, the study with pure hexane, the sensitivity analysis and the rules of optimization for pressure-pulsed CVD process do not suffer any inaccuracy, according to our simplifying assumptions. We confirm that a solvent and precursor with high vapor pressure and low enthalpy of vaporization should be chosen and that the main processing parameter to control is the reactor wall temperature, which provides heat for phase change and shortens droplet life. We plan to carry out experimental work in the near future with TTIP using different solvents and with different reactor wall temperature to study the effects on vaporization efficiency and thus growth rate.

The authors apologize for any inconvenience caused by these errors.

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来源期刊
Chemical Vapor Deposition
Chemical Vapor Deposition 工程技术-材料科学:膜
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>12 weeks
期刊介绍: Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
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