用于CMOS兼容光电探测器的低温PureB技术

Chemical Vapor Deposition Pub Date : 2016-08-31 DOI:10.5772/63344

V. Mohammadi

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引用次数: 2

摘要

本文对传统的高温(HT, 700°C) PureB技术进行了优化，以制造具有改进的关键参数(如响应度的空间均匀性)的探测器。开发了一种低温(LT, 400°C)硼沉积新技术，可提供均匀，光滑，封闭的LT硼层。该技术成功地用于制造具有低深结饱和电流的近理想的LT PureB(纯硼)二极管，这使得将LT PureB光电二极管与电子接口电路和其他传感器完全集成在单个芯片上成为可能。通过这种方式，可以实现智能传感器系统甚至CCD或CMOS紫外成像仪。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low Temperature PureB Technology for CMOS Compatible Photodetectors

In this thesis, conventional high temperature (HT, 700 °C) PureB technology is optimized in order to fabricate detectors with improved key parameters such as the spatial uniformity of the responsivity. A novel technology for low temperature (LT, 400 °C) boron deposition is developed providing a uniform, smooth, closed LT boron layer. This technology is successfully employed to create near-ideal LT PureB (pure boron) diodes with low, deep-junction-like saturation currents which make it possible to fully integrate LT PureB photodiodes together with electronic interface circuits and other sensors on a single chip. In this way, smart sensor systems or even CCD or CMOS UV imagers can be realized.

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来源期刊

Chemical Vapor Deposition 工程技术-材料科学：膜

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.