利用等离子体增强CVD技术合成高质量、大面积、高生长速率的石墨烯

Q4 Social Sciences

Synthesiology Pub Date : 2016-01-01 DOI:10.5571/SYNTHENG.9.3_124

M. Hasegawa, K. Tsugawa, R. Kato, Y. Koga, M. Ishihara, T. Yamada, Yuki Okigawa

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引用次数: 2

摘要

在石墨烯采用铜箔基片进行CVD的情况下，CVD前铜箔的表面清洗技术尤为重要。同样，在等离子体辅助CVD(等离子体CVD)的情况下，有必要防止污染，如等离子体暴露从反应室释放的杂质，特别是硅，它来自用于激发等离子体的天线单元的石英。

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High quality and large-area graphene synthesis with a high growth rate using plasma-enhanced CVD

In the case of CVD of graphene using a copper foil substrate, surface cleaning technique of copper foil before CVD is especially important. Also in the case of plasma-assisted CVD (plasma CVD), it is necessary to prevent contamination such as impurities released from the reaction chamber by plasma exposure, particularly silicon, which originate from the quartz of antenna units for exciting plasma.

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Synthesiology Social Sciences-Social Sciences (all)

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