{"title":"已建立的MOSFET阈值电压提取方法在10nm技术节点上的比较方法评价","authors":"Yashu Swami, Sanjeev Rai","doi":"10.4236/CS.2016.713349","DOIUrl":null,"url":null,"abstract":"Threshold voltage (VTH) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise VTH value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of VTH diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent VTH extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes.","PeriodicalId":63422,"journal":{"name":"电路与系统(英文)","volume":"07 1","pages":"4248-4279"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Comparative Methodical Assessment of Established MOSFET Threshold Voltage Extraction Methods at 10-nm Technology Node\",\"authors\":\"Yashu Swami, Sanjeev Rai\",\"doi\":\"10.4236/CS.2016.713349\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Threshold voltage (VTH) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise VTH value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of VTH diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent VTH extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes.\",\"PeriodicalId\":63422,\"journal\":{\"name\":\"电路与系统(英文)\",\"volume\":\"07 1\",\"pages\":\"4248-4279\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"电路与系统(英文)\",\"FirstCategoryId\":\"1093\",\"ListUrlMain\":\"https://doi.org/10.4236/CS.2016.713349\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"电路与系统(英文)","FirstCategoryId":"1093","ListUrlMain":"https://doi.org/10.4236/CS.2016.713349","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparative Methodical Assessment of Established MOSFET Threshold Voltage Extraction Methods at 10-nm Technology Node
Threshold voltage (VTH) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise VTH value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of VTH diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent VTH extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes.