Nzonzolo, D. Lilonga-Boyenga, Camille Nziengui Mabika, G. Sissoko
{"title":"二维有限元法分析晶界复合速度对多晶硅太阳电池特性的影响","authors":"Nzonzolo, D. Lilonga-Boyenga, Camille Nziengui Mabika, G. Sissoko","doi":"10.4236/CS.2016.713344","DOIUrl":null,"url":null,"abstract":"To take into account the variation of the recombination velocity at the grain boundaries, we present in this paper a new approach of characterization of the solar cells, based on the two dimensional finite element method. The results of this study on a bifacial polycrystalline silicon solar cell, modelled in the rectangular form, highlighting the effects of the boundary recombination velocity (Sgb) on the solar cell electrical parameters. The photogenerated excess carrier’s density, the photocurrent density; the phototovoltage and the current-voltage characteristics are analyzed, namely. A good agreement with the results given in the literature is observed.","PeriodicalId":63422,"journal":{"name":"电路与系统(英文)","volume":"07 1","pages":"4186-4200"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Two-Dimensional Finite Element Method Analysis Effect of the Recombination Velocity at the Grain Boundaries on the Characteristics of a Polycrystalline Silicon Solar Cell\",\"authors\":\"Nzonzolo, D. Lilonga-Boyenga, Camille Nziengui Mabika, G. Sissoko\",\"doi\":\"10.4236/CS.2016.713344\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To take into account the variation of the recombination velocity at the grain boundaries, we present in this paper a new approach of characterization of the solar cells, based on the two dimensional finite element method. The results of this study on a bifacial polycrystalline silicon solar cell, modelled in the rectangular form, highlighting the effects of the boundary recombination velocity (Sgb) on the solar cell electrical parameters. The photogenerated excess carrier’s density, the photocurrent density; the phototovoltage and the current-voltage characteristics are analyzed, namely. A good agreement with the results given in the literature is observed.\",\"PeriodicalId\":63422,\"journal\":{\"name\":\"电路与系统(英文)\",\"volume\":\"07 1\",\"pages\":\"4186-4200\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"电路与系统(英文)\",\"FirstCategoryId\":\"1093\",\"ListUrlMain\":\"https://doi.org/10.4236/CS.2016.713344\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"电路与系统(英文)","FirstCategoryId":"1093","ListUrlMain":"https://doi.org/10.4236/CS.2016.713344","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two-Dimensional Finite Element Method Analysis Effect of the Recombination Velocity at the Grain Boundaries on the Characteristics of a Polycrystalline Silicon Solar Cell
To take into account the variation of the recombination velocity at the grain boundaries, we present in this paper a new approach of characterization of the solar cells, based on the two dimensional finite element method. The results of this study on a bifacial polycrystalline silicon solar cell, modelled in the rectangular form, highlighting the effects of the boundary recombination velocity (Sgb) on the solar cell electrical parameters. The photogenerated excess carrier’s density, the photocurrent density; the phototovoltage and the current-voltage characteristics are analyzed, namely. A good agreement with the results given in the literature is observed.