第一性原理研究揭示了Janus RuClF单层膜拓扑和电子特性的电子相关效应:自旋电子学和谷电子学应用的意义

IF 5.5 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Kang Jia, Xiao-Jing Dong, Sheng-Shi Li, Wei-Xiao Ji and Chang-Wen Zhang*, 
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引用次数: 0

摘要

将非平凡带拓扑与本禀铁谷(FV)相结合的谷非平衡量子反常霍尔效应(VQAHE)因其潜在的应用前景和基础物理特性而受到越来越多的关注。某些具有局域轨道分布和特殊结构的体系的电子性质会受到电子相关效应的影响。在我们的工作中,基于第一性原理计算+ U方法研究了Janus RuClF单层(ML)的电子相关效应。在面外(OOP)方向的磁化方向上,rulf ML经历了从FV到半谷金属(HVM)到VQAHE再到HVM到FV的转变,电子相关效应增强。当2.52 <时,存在一个连接价带和导带的手性边态和一个整数陈恩数(C = 1);你& lt;2.55 eV。磁化方向沿面内方向没有明显的谷极化和特殊的VQAHE相。无论IP或OOP磁各向异性如何,随着U值的增加,可以发现符号可逆的Berry曲率。值得注意的是,随着U值的增加,RuClF ML的磁化强度在OOP和IP之间存在差异,关键U值约为2.41 eV。当考虑本征磁各向异性时,不存在HVM和VQAHE态。本工作发现了磁各向异性和电子相关效应在RuClF ML中的重要性,并强调了电子相关效应可以诱导异常的拓扑相变。我们的结果表明,RuClF ML是一种令人钦佩的材料,用于拓扑电子,自旋电子和谷电子应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

First-Principles Study Reveals an Electronic Correlation Effect on the Topological and Electronic Properties of Janus RuClF Monolayers: Implications for Spintronics and Valleytronics Applications

First-Principles Study Reveals an Electronic Correlation Effect on the Topological and Electronic Properties of Janus RuClF Monolayers: Implications for Spintronics and Valleytronics Applications

Combining the nontrivial band topology with the intrinsic ferrovalley (FV), the valley-nonequilibrium quantum anomalous Hall effect (VQAHE) attracts growing attention both for its potential applications and basic physics. The electronic properties of some systems with localized orbital distribution and special structures could be influenced by the electronic correlation effect. In our work, the electronic correlation effect on the electronic structures for a Janus RuClF monolayer (ML) is investigated based on the first-principles calculations + U method. For the magnetization orientation along the out-of-plane (OOP) direction, RuClF ML undergoes FV to half-valley-metal (HVM) to VQAHE to HVM to FV transitions with increasing electron correlation effects. There is a chiral edge state connecting the valence and conduction bands and an integer Chern number (C = 1) when 2.52 < U < 2.55 eV. No obvious valley polarization and special VQAHE phases occur for the magnetization orientation along the in-plane (IP) direction. Regardless of IP or OOP magnetic anisotropy, the sign-reversible Berry curvature can be found with increasing U values. Notably, with increasing U values, the magnetization of RuClF ML varies from OOP to IP, and the key U value is approximately 2.41 eV. When taking into account the intrinsic magnetic anisotropy, no HVM and VQAHE states exist. This work finds the significance of magnetic anisotropy and electronic correlation effects in RuClF ML and highlights that electronic correlation effects can induce unusual topological phase transitions. Our consequences manifest that RuClF ML is an admirable material for topological electronic, spintronic, and valleytronic applications.

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来源期刊
CiteScore
8.30
自引率
3.40%
发文量
1601
期刊介绍: ACS Applied Nano Materials is an interdisciplinary journal publishing original research covering all aspects of engineering, chemistry, physics and biology relevant to applications of nanomaterials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important applications of nanomaterials.
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