高压强磁场下窄隙半导体中的量子输运现象

Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu Pub Date : 2020-01-01 DOI:10.4131/jshpreview.30.260

K. Akiba, M. Tokunaga

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引用次数: 0

摘要

Kazuto AKIBA 1,2，在这篇文章中，我们回顾了我们在黑磷和碲化铅的金属绝缘体边界附近的非常规电子态的探索，它们长期以来被认为是具有简单晶体结构的窄间隙半导体。在这种高迁移率的低载流子体系中，高磁场和高压的作用会对能带结构和物理性质产生极大的影响。高压是一个强大的工具，可以不断地调整带结构

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Quantum Transport Phenomena in Narrow-Gap Semiconductors under High Pressure and High Magnetic Field

Kazuto AKIBA 1,2,  徳永将史  Masashi TOKUNAGA 2 In this article, we review our exploration of unconventional electronic states near the metal-insulator boundary in black phosphorus and lead telluride, which have long been known as narrow-gap semiconductors with simple crystal structure. In such low carrier systems with high mobility, the energy band structure and physical property can be drastically affected by application of high magnetic field and high pressure. High pressure is a powerful tool to continuously tune the band structure from

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来源期刊

Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu Chemistry-Chemistry (all)

CiteScore

0.10

自引率

0.00%

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