{"title":"利用高压复分解反应合成新型氮化物半导体及硬质材料","authors":"F. Kawamura, H. Yusa","doi":"10.4131/JSHPREVIEW.30.195","DOIUrl":null,"url":null,"abstract":"KAWAMURA 遊佐 斉 Hitoshi YUSA High-pressure metathesis reaction is a promising method for synthesizing novel nitride compounds, e.g. multi-component semiconductors and hard materials. The strong nitridation ability under high pressure makes it possi-ble to realize such compounds. In this article, we introduce our attempts to synthesize 5d nitrides ( ReN 2 , WN and W 2.25 N 3 ) and ternary nitride semiconductors ( ZnSnN 2 and MgSnN 2 ) using the metathesis reaction. This method contributes not only to improvement of crystallinity but also to the synthesis of metastable phases. The high-pressure metathesis reaction may open a way for realizing materials designed","PeriodicalId":39932,"journal":{"name":"Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis of Novel Nitride Semiconductors and Hard Materials Using High-Pressure Metathesis Reaction\",\"authors\":\"F. Kawamura, H. Yusa\",\"doi\":\"10.4131/JSHPREVIEW.30.195\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"KAWAMURA 遊佐 斉 Hitoshi YUSA High-pressure metathesis reaction is a promising method for synthesizing novel nitride compounds, e.g. multi-component semiconductors and hard materials. The strong nitridation ability under high pressure makes it possi-ble to realize such compounds. In this article, we introduce our attempts to synthesize 5d nitrides ( ReN 2 , WN and W 2.25 N 3 ) and ternary nitride semiconductors ( ZnSnN 2 and MgSnN 2 ) using the metathesis reaction. This method contributes not only to improvement of crystallinity but also to the synthesis of metastable phases. The high-pressure metathesis reaction may open a way for realizing materials designed\",\"PeriodicalId\":39932,\"journal\":{\"name\":\"Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.4131/JSHPREVIEW.30.195\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4131/JSHPREVIEW.30.195","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Synthesis of Novel Nitride Semiconductors and Hard Materials Using High-Pressure Metathesis Reaction
KAWAMURA 遊佐 斉 Hitoshi YUSA High-pressure metathesis reaction is a promising method for synthesizing novel nitride compounds, e.g. multi-component semiconductors and hard materials. The strong nitridation ability under high pressure makes it possi-ble to realize such compounds. In this article, we introduce our attempts to synthesize 5d nitrides ( ReN 2 , WN and W 2.25 N 3 ) and ternary nitride semiconductors ( ZnSnN 2 and MgSnN 2 ) using the metathesis reaction. This method contributes not only to improvement of crystallinity but also to the synthesis of metastable phases. The high-pressure metathesis reaction may open a way for realizing materials designed